LASER EMISSIONS FROM CO2 VIBRATIONAL TRANSITIONS IN A LOW TEMPERATURE SUPERSONIC FLOW EXCITED BY A PULSED ELECTRON BEAM STABILIZED DISCHARGE

1980 ◽  
Vol 41 (C9) ◽  
pp. C9-287-C9-291 ◽  
Author(s):  
B. Fontaine ◽  
B. Forestier ◽  
P. Gross ◽  
E. M. Koudriavtsev
Keyword(s):  
Electron Beam ◽  
Supersonic Flow ◽  
Low Temperature ◽  
Pulsed Electron Beam ◽  
Vibrational Transitions

Pulsed Electron Beam Processing of Silicon Devices

1980 ◽  
Vol 1 ◽  
Author(s):  
A. C. Greenwald ◽  
R. P. Dolan ◽  
S. P. Tobin
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Low Dose ◽  
Electron Beams ◽  
Pulsed Electron Beam ◽  
Process Sequence ◽  
Pulse Processing ◽  
Silicon Devices ◽  
Electron Beam Processing ◽  
Thermal Oxide

ABSTRACTPulsed electron beams [1] were used to anneal ion-implanted diodes, transistors, and resistors. Devices were fabricated by patterning a thermal oxide on a silicon wafer, ion-implanting and pulse processing with the oxide in place, and then applying contacts. Oxide films over 0.3 micron thick were not damaged, and the silicon below these films was not melted by the pulsed electron beam. Low-dose (101311B+/cm2), implanted, pulse-annealed resistors showed no change in sheet resistance for oxide windows 2.5 to 50.0 microns wide. Diodes were fashioned with good forward and reverse I-V characteristics, with m=1.09 and IO=2.7×10−10 A/cm2 for I=IO exp(qV.mkT)−1 , when a low-temperature (550˚C, 1 hr), postpulse anneal was included in the process sequence. Both bipolar and FET types of transistors were fabricated. Results compare favorably with thermal annealing cycles.

Analysis of Desorbed Gases from Oxygen-free Copper Stimulated by Irradiation with Single Pulsed Electron Beam

2012 ◽  
Vol 132 (11) ◽  
pp. 951-957
Author(s):  
Hiroki Kaneko ◽  
Yasushi Yamano ◽  
Shinichi Kobayashi ◽  
Yoshio Saito
Keyword(s):  
Electron Beam ◽  
Pulsed Electron Beam

scholarly journals The Effect of a Pulsed Electron Beam on Damage Threshold

2018 ◽  
Vol 24 (S1) ◽  
pp. 2002-2003 ◽  
Author(s):  
Elisah J. VandenBussche ◽  
David J. Flannigan
Keyword(s):  
Electron Beam ◽  
Damage Threshold ◽  
Pulsed Electron Beam

The structure and properties of boron carbide ceramics modified by high-current pulsed electron-beam

2016 ◽  
Author(s):  
Yuri Ivanov ◽  
Oleg Tolkachev ◽  
Maria Petyukevich ◽  
Anton Teresov ◽  
Olga Ivanova ◽  
...  
Keyword(s):  
Electron Beam ◽  
Boron Carbide ◽  
Structure And Properties ◽  
High Current ◽  
Pulsed Electron Beam ◽  
Carbide Ceramics
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