High‐resolution focused ion beam lithography

AbstractAperture arrays were fabricated in 1.0µm thick gold films supported on 20nm thick silicon nitride membranes. Lithographic milling strategies in gold were evaluated through the use of in-situ sectioning and high resolution SEM imaging with the UWO CrossBeam FIB/SEM. A successful strategy for producing a 250nm diameter hole with sidewalls approaching vertical is summarized.

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Resolution Limits of Focused-Ion-Beam Resist Patterning

MRS Proceedings ◽

10.1557/proc-279-567 ◽

1992 ◽

Vol 279 ◽

Cited By ~ 3

Author(s):

R. L. Kubena

Keyword(s):

High Resolution ◽

Focused Ion Beam ◽

Ion Beam ◽

Proximity Effects ◽

Lower Sensitivity ◽

Ion Scattering ◽

Spot Diameter ◽

Ion Beam Lithography ◽

Scattering Effects ◽

Resolution Limits

ABSTRACTWe have recently demonstrated the ability to focus a 50-keV Ga+ beam to an 8-nm-diameter spot diameter. This ultra-high resolution probe has been used to study the resolution limits of conventional resists for focused-ion-beam lithography. Lines and dots in poly (methylmethacrylate) resist as small as 7–8 nm have been formed with high throughput. In addition, no proximity effects have been observed for 25 to 30-nm size features on high-z substrates. However, for the smallest geometries obtainable, the pattern fidelity and resolution are most likely limited by ion scattering effects and statistical dose fluctuations. The use of lighter ions (such as He, Li, or Be) with lower sensitivity resists should, in principle, allow focused-ion-beam lithography to be extended to the sub-5 nm regime.

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High-resolution focused ion beam lithography

Microelectronic Engineering ◽

10.1016/0167-9317(90)90144-i ◽

1990 ◽

Vol 11 (1-4) ◽

pp. 427-430 ◽

Cited By ~ 8

Author(s):

Shinji Matsui ◽

Yoshikatsu Kojima ◽

Yukinori Ochiai ◽

Toshiyuki Honda ◽

Katsumi Suzuki

Keyword(s):

High Resolution ◽

Focused Ion Beam ◽

Ion Beam ◽

Ion Beam Lithography

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High-resolution focused ion beam lithography

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585660 ◽

1991 ◽

Vol 9 (5) ◽

pp. 2622 ◽

Cited By ~ 23

Author(s):

Shinji Matsui

Keyword(s):

High Resolution ◽

Focused Ion Beam ◽

Ion Beam ◽

Ion Beam Lithography

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FIB Enhancement of Mechanically Polished Cross-sections

ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2019p0232 ◽

2019 ◽

Author(s):

Becky Holdford

Keyword(s):

Electron Microscope ◽

High Resolution ◽

Scanning Electron Microscope ◽

Cross Sections ◽

Focused Ion Beam ◽

Ion Beam ◽

High Resolution Imaging ◽

Chemical Attack ◽

Resolution Imaging ◽

Scanning Electron

Abstract On mechanically polished cross-sections, getting a surface adequate for high-resolution imaging is sometimes beyond the analyst’s ability, due to material smearing, chipping, polishing media chemical attack, etc.. A method has been developed to enable the focused ion beam (FIB) to re-face the section block and achieve a surface that can be imaged at high resolution in the scanning electron microscope (SEM).

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The Novel Dopant Profile Inspection Methodology by FIB

ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2010p0257 ◽

2010 ◽

Author(s):

Po Fu Chou ◽

Li Ming Lu

Keyword(s):

High Resolution ◽

Focused Ion Beam ◽

Ion Beam ◽

Real Sample ◽

Physical Analysis ◽

The Novel ◽

High Contrast ◽

Dopant Profile ◽

P Type

Abstract Dopant profile inspection is one of the focused ion beam (FIB) physical analysis applications. This paper presents a technique for characterizing P-V dopant regions in silicon by using a FIB methodology. This technique builds on published work for backside FIB navigation, in which n-well contrast is observed. The paper demonstrates that the technique can distinguish both n- and p-type dopant regions. The capability for imaging real sample dopant regions on current fabricated devices is also demonstrated. SEM DC and FIB DC are complementary methodologies for the inspection of dopants. The advantage of the SEM DC method is high resolution and the advantage of FIB DC methodology is high contrast, especially evident in a deep N-well region.

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