Resolution Limits of Focused-Ion-Beam Resist Patterning

1992 ◽  
Vol 279 ◽  
Author(s):  
R. L. Kubena

ABSTRACTWe have recently demonstrated the ability to focus a 50-keV Ga+ beam to an 8-nm-diameter spot diameter. This ultra-high resolution probe has been used to study the resolution limits of conventional resists for focused-ion-beam lithography. Lines and dots in poly (methylmethacrylate) resist as small as 7–8 nm have been formed with high throughput. In addition, no proximity effects have been observed for 25 to 30-nm size features on high-z substrates. However, for the smallest geometries obtainable, the pattern fidelity and resolution are most likely limited by ion scattering effects and statistical dose fluctuations. The use of lighter ions (such as He, Li, or Be) with lower sensitivity resists should, in principle, allow focused-ion-beam lithography to be extended to the sub-5 nm regime.

2006 ◽  
Vol 983 ◽  
Author(s):  
Todd Simpson ◽  
Ian V Mitchell

AbstractAperture arrays were fabricated in 1.0µm thick gold films supported on 20nm thick silicon nitride membranes. Lithographic milling strategies in gold were evaluated through the use of in-situ sectioning and high resolution SEM imaging with the UWO CrossBeam FIB/SEM. A successful strategy for producing a 250nm diameter hole with sidewalls approaching vertical is summarized.


2000 ◽  
Vol 636 ◽  
Author(s):  
Kenneth E. Gonsalves ◽  
Hengpeng Wu ◽  
Yongqi Hu ◽  
Lhadi Merhari

AbstractThe SIA roadmap predicts mass production of sub-100 nm resolution circuits by 2006. This not only imposes major constraints on next generation lithographic tools but also requires that new resists capable of accommodating such a high resolution be synthesized and developed concurrently. Except for ion beam lithography, DUV, X-ray, and in particular electron beam lithography suffer significantly from proximity effects, leading to severe degradation of resolution in classical resists. We report a new class of resists based on organic/inorganic nanocomposites having a structure that reduces the proximity effects. Synthetic routes are described for a ZEP520®nano-SiO2 resist where 47nm wide lines have been written with a 40 nm diameter, 20 keV electron beam at no sensitivity cost. Other resist systems based on polyhedral oligosilsesquioxane copolymerized with MMA, TBMA, MMA and a proprietary PAG are also presented. These nanocomposite resists suitable for DUV and electron beam lithography show enhancement in both contrast and RIE resistance in oxygen. Tentative mechanisms responsible for proximity effect reduction are also discussed.


1988 ◽  
Vol 53 (10) ◽  
pp. 868-870 ◽  
Author(s):  
Shinji Matsui ◽  
Yoshikatsu Kojima ◽  
Yukinori Ochiai

1990 ◽  
Vol 11 (1-4) ◽  
pp. 427-430 ◽  
Author(s):  
Shinji Matsui ◽  
Yoshikatsu Kojima ◽  
Yukinori Ochiai ◽  
Toshiyuki Honda ◽  
Katsumi Suzuki

Author(s):  
Becky Holdford

Abstract On mechanically polished cross-sections, getting a surface adequate for high-resolution imaging is sometimes beyond the analyst’s ability, due to material smearing, chipping, polishing media chemical attack, etc.. A method has been developed to enable the focused ion beam (FIB) to re-face the section block and achieve a surface that can be imaged at high resolution in the scanning electron microscope (SEM).


Author(s):  
Po Fu Chou ◽  
Li Ming Lu

Abstract Dopant profile inspection is one of the focused ion beam (FIB) physical analysis applications. This paper presents a technique for characterizing P-V dopant regions in silicon by using a FIB methodology. This technique builds on published work for backside FIB navigation, in which n-well contrast is observed. The paper demonstrates that the technique can distinguish both n- and p-type dopant regions. The capability for imaging real sample dopant regions on current fabricated devices is also demonstrated. SEM DC and FIB DC are complementary methodologies for the inspection of dopants. The advantage of the SEM DC method is high resolution and the advantage of FIB DC methodology is high contrast, especially evident in a deep N-well region.


2002 ◽  
Vol 81 (5) ◽  
pp. 865-867 ◽  
Author(s):  
G. N. Phillips ◽  
M. Siekman ◽  
L. Abelmann ◽  
J. C. Lodder

1989 ◽  
Vol 9 (1-4) ◽  
pp. 277-279 ◽  
Author(s):  
Takao Shiokawa ◽  
Pil Hyon Kim ◽  
Manabu Hamagaki ◽  
Tamio Hara ◽  
Yoshinobu Aoyagi ◽  
...  

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