Improvement of the stability of hydrogenated amorphous silicon films and solar cells by light pulse treatment

1989 ◽  
Vol 54 (13) ◽  
pp. 1226-1228 ◽  
Author(s):  
W. A. Nevin ◽  
H. Yamagishi ◽  
Y. Tawada
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Light Pulse ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Pulse Treatment ◽  
The Stability ◽  
Hydrogenated Amorphous

Substrate temperature effect on the stability of hydrogenated amorphous silicon films deposited at high rates

1995 ◽  
Vol 78 (1) ◽  
pp. 317-320 ◽  
Author(s):  
J. P. Kleider ◽  
C. Longeaud ◽  
M. Barranco‐Diaz ◽  
P. Morin ◽  
P. Roca i Cabarrocas
Keyword(s):  
Substrate Temperature ◽  
Temperature Effect ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
The Stability ◽  
Hydrogenated Amorphous

Improvement of the stability of amorphous silicon solar cells by light pulse treatment

1989 ◽  
Vol 115 (1-3) ◽  
pp. 48-50 ◽  
Author(s):  
W.A. Nevin ◽  
H. Yamagishi ◽  
K. Asaoka ◽  
M. Yamaguchi ◽  
Y. Tawada
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Light Pulse ◽  
Silicon Solar Cells ◽  
Pulse Treatment ◽  
The Stability

DEVELOPMENT OF HIGHLY STABLE HYDROGENATED AMORPHOUS SILICON FILMS FOR APPLICATION IN SOLAR CELLS

2006 ◽  
Vol 20 (14) ◽  
pp. 2035-2047 ◽  
Author(s):  
Q. S. LEI ◽  
Z. M. WU ◽  
J. P. XI ◽  
X. H. GENG ◽  
Y. ZHAO ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
High Stability ◽  
Hydrogenated Amorphous Silicon ◽  
Light Illumination ◽  
Plasma Power ◽  
Dilution Ratio ◽  
Hydrogen Dilution ◽  
The Stability ◽  
Hydrogenated Amorphous

Highly stable hydrogenated amorphous silicon (a- Si:H ) films were developed by very high frequency plasma enhanced chemical vapor deposition (VHF PECVD). Their electrical and structural properties were studied. The films were applied as i-layers for p-i-n solar cells. The stability of intrinsic films as well as solar cells was studied. Results suggest that a- Si:H films prepared at high hydrogen dilution ratio (R) and low plasma power (PW) have low hydrogen content (CH) and small microstructure factor (RH) and show high stability against light illumination. The device with i-layer prepared at PW=5 W and R=10 shows a high stability with degradation in fill factor and efficiency of 3.23% and 11.64%, respectively, over 1000 hours illumination. However, the device with i-layer prepared at higher plasma power (PW=25 W ) and lower hydrogen dilution ratio (R=5) was much less stable. The stability of the devices is directly related to the stability of the intrinsic materials.

scholarly journals High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells

2016 ◽  
Vol 28 (28) ◽  
pp. 5939-5942 ◽  
Author(s):  
Rongrui He ◽  
Todd D. Day ◽  
Justin R. Sparks ◽  
Nichole F. Sullivan ◽  
John V. Badding
Keyword(s):  
High Pressure ◽  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Pressure Chemical ◽  
Hydrogenated Amorphous

The Nature and the Kinetics of Light-Induced Defect Creation in Hydrogenated Amorphous Silicon Films and Solar Cells

2014 ◽  
Vol 4 (6) ◽  
pp. 1331-1336 ◽  
Author(s):  
Jimmy Melskens ◽  
Marc Schouten ◽  
Awital Mannheim ◽  
Albert S. Vullers ◽  
Yalda Mohammadian ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Defect Creation ◽  
Hydrogenated Amorphous ◽  
Kinetics Of
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