Hydrogenated amorphous silicon films with low defect density prepared by argon dilution: application to solar cells

2002 ◽  
Vol 403-404 ◽  
pp. 275-279 ◽  
Author(s):  
P.P Ray ◽  
P Chaudhuri ◽  
P Chatterjee
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Argon Dilution ◽  
Hydrogenated Amorphous

scholarly journals Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
F. X. Abomo Abega ◽  
A. Teyou Ngoupo ◽  
J. M. B. Ndjaka
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Theoretical Work ◽  
Silicon Based ◽  
The Impact ◽  
Hydrogenated Amorphous

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13  cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95   mA · c m − 2 , V OC = 0.973   V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.

Assessment of Intrinsic-Layer Growth Temperature to High-Deposition-Rate a-Si:H n-i-p Solar Cells Deposited by Hot-Wire CVD

1999 ◽  
Vol 557 ◽  
Author(s):  
Qi Wang ◽  
Eugene Iwaniczko ◽  
Yueqin Xu ◽  
Brent P. Nelson ◽  
A. H. Mahan
Keyword(s):  
Solar Cells ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Diffusion Length ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Ambipolar Diffusion ◽  
Hot Wire ◽  
Top Contact ◽  
Hydrogenated Amorphous

AbstractWe report progress in hydrogenated amorphous silicon n-i-p solar cells with the i-layer grown by the hot-wire chemical vapor deposition technique. Early research showed that we grew device-quality materials with low saturated defect density (2 × 106/cm3), high initial ambipolar diffusion length (~2000 Å) and low hydrogen content (<1%). One of the major barriers to implementing this material into solar cells is the high substrate temperature required (>400°C). We re-assess the effects of low substrate temperature on the property of the films and the performance of the solar cells as an alternative avenue to solving this problem. We find that the material grown at 300°C can have similar values of saturated defect density and ambipolar diffusion length as the one grown greater than 400°C. We also study the effect of i-layer substrate temperature ranging from 280° to 440°C for n-i-p solar cells. We now consistently grow devices with Fill Factor (FF) greater than 0.66, with the best close to 0.70 at lower substrate temperature. A collaboration with United Solar System, in where they grew the p-layer and top contact, produced devices with initial efficiencies as high as 9.8%. We produce n-i-p solar cells with initial efficiencies as high as 8% when we grow all the hydrogenated amorphous silicon and top contact layers. All these i-layers are grown at deposition rates of 16 to 18 Å/sec. We need to further improve our p-layer and transparent conductor layer to equal the collaborative cell efficiency. We also report light-soaking results of these devices.

scholarly journals High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells

2016 ◽  
Vol 28 (28) ◽  
pp. 5939-5942 ◽  
Author(s):  
Rongrui He ◽  
Todd D. Day ◽  
Justin R. Sparks ◽  
Nichole F. Sullivan ◽  
John V. Badding
Keyword(s):  
High Pressure ◽  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Pressure Chemical ◽  
Hydrogenated Amorphous

The Nature and the Kinetics of Light-Induced Defect Creation in Hydrogenated Amorphous Silicon Films and Solar Cells

2014 ◽  
Vol 4 (6) ◽  
pp. 1331-1336 ◽  
Author(s):  
Jimmy Melskens ◽  
Marc Schouten ◽  
Awital Mannheim ◽  
Albert S. Vullers ◽  
Yalda Mohammadian ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Defect Creation ◽  
Hydrogenated Amorphous ◽  
Kinetics Of

Defect Density Profiling in Light-Soaked and Annealed Hydrogenated Amorphous Silicon Solar Cells

2001 ◽  
Vol 664 ◽  
Author(s):  
Richard S. Crandall ◽  
Jeffrey Yang ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Central Region ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Hydrogenated Amorphous

ABSTRACTThe fundamental ingredient lacking in solar cell modeling is the spatial distribution of defects. To gain this information, we use drive-level capacitance profiling (DLCP) on hydrogenated amorphous silicon solar cells. We find the following: Near the p-i interface the defect density is high, decreasing rapidly into the interior, reaching low values in the central region of the cell, and rising rapidly again at the n-i interface. The states in the central region are neutral dangling-bond defects whose density agrees with those typically found in similar films. However, those near the interfaces with the doped layers are charged dangling bonds in agreement with the predictions of defect thermodynamics. We correlate the changes in solar cell efficiency owing to intense illumination with changes in the defect density throughout the cell. Defects in the central region of the cell increase to values typically found in companion films. We describe the measurements and interpretation of DLCP for solar cells with the aid of a solar cell simulation.

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