DEVELOPMENT OF HIGHLY STABLE HYDROGENATED AMORPHOUS SILICON FILMS FOR APPLICATION IN SOLAR CELLS

2006 ◽  
Vol 20 (14) ◽  
pp. 2035-2047 ◽  
Author(s):  
Q. S. LEI ◽  
Z. M. WU ◽  
J. P. XI ◽  
X. H. GENG ◽  
Y. ZHAO ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
High Stability ◽  
Hydrogenated Amorphous Silicon ◽  
Light Illumination ◽  
Plasma Power ◽  
Dilution Ratio ◽  
Hydrogen Dilution ◽  
The Stability ◽  
Hydrogenated Amorphous

Highly stable hydrogenated amorphous silicon (a- Si:H ) films were developed by very high frequency plasma enhanced chemical vapor deposition (VHF PECVD). Their electrical and structural properties were studied. The films were applied as i-layers for p-i-n solar cells. The stability of intrinsic films as well as solar cells was studied. Results suggest that a- Si:H films prepared at high hydrogen dilution ratio (R) and low plasma power (PW) have low hydrogen content (CH) and small microstructure factor (RH) and show high stability against light illumination. The device with i-layer prepared at PW=5 W and R=10 shows a high stability with degradation in fill factor and efficiency of 3.23% and 11.64%, respectively, over 1000 hours illumination. However, the device with i-layer prepared at higher plasma power (PW=25 W ) and lower hydrogen dilution ratio (R=5) was much less stable. The stability of the devices is directly related to the stability of the intrinsic materials.

Fast light-induced change in ellipsometry spectra of hydrogenated amorphous silicon measured through a transparent substrate upon bias light illumination

2001 ◽  
Vol 664 ◽  
Author(s):  
N. Hata ◽  
C. M. Fortmann ◽  
A. Matsuda
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Light Illumination ◽  
Temperature Dependent ◽  
Transparent Substrate ◽  
Optical Effects ◽  
The Stability ◽  
Fast Light ◽  
First Time ◽  
Hydrogenated Amorphous

ABSTRACTPrevious ellipsometric studies of the stability of amorphous silicon (a-Si:H) found reversible changes in the pseudo-dielectric functions. These changes were slow to generate and slow to anneal away. These slow changes are associated with a dangling bond related structural change. Since any light-induced change in the dielectric function is useful for photonic engineering, we undertook the present more detailed study of light induced optical effects in a-Si:H. The optical pseudo-dielectric functions of hydrogenated amorphous silicon (a-Si:H) were measured using spectroscopic ellipsometry (SE) and the “through-the-substrate” measurement technique as a function of measurement temperature and bias light illumination. For the first time we report a light-induced change in a-Si:H materials that is fast, bias-light-dependent, reversible, and temperature dependent. This effect, while not completely understood, offers exciting new prospects for photonic engineering.

Effect of Hydrogen Dilution on the Metastability of Hydrogenated Amorphous Silicon Oxide Solar Cells

2011 ◽  
Vol 50 ◽  
pp. 111401
Author(s):  
Sorapong Inthisang ◽  
Taweewat Krajangsang ◽  
Porponth Sichanugrist ◽  
Tatsuro Watahiki ◽  
Shinsuke Miyajima ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Oxide ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogen Dilution ◽  
Amorphous Silicon Oxide ◽  
Hydrogenated Amorphous

Effect of Hydrogen Dilution on the Metastability of Hydrogenated Amorphous Silicon Oxide Solar Cells

2011 ◽  
Vol 50 (11R) ◽  
pp. 111401 ◽  
Author(s):  
Sorapong Inthisang ◽  
Taweewat Krajangsang ◽  
Porponth Sichanugrist ◽  
Tatsuro Watahiki ◽  
Shinsuke Miyajima ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Oxide ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogen Dilution ◽  
Amorphous Silicon Oxide ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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