scholarly journals High efficiency single quantum well graded‐index separate‐confinement heterostructure lasers fabricated with MeV oxygen ion implantation

1989 ◽  
Vol 54 (8) ◽  
pp. 730-732 ◽  
Author(s):  
Fulin Xiong ◽  
T. A. Tombrello ◽  
H. Wang ◽  
T. R. Chen ◽  
H. Z. Chen ◽  
...  
1988 ◽  
Vol 144 ◽  
Author(s):  
Fulin Xiong ◽  
T. A. Tombrello ◽  
H. Wang ◽  
T. R. Chen ◽  
H. Z. Chen ◽  
...  

ABSTRACTMeV oxygen ion implantation in GaAs/AlGaAs has been shown to provide a simple and very promising technique for quantum well laser fabrication. A l0μm stripe single quantum well (SQW) graded-index separation confinement heterostructure (GRINSCH) laser made in this way has achieved high performance with high quantum differential efficiency, low threshold current and good electrical isolation characteristics. MeV oxygen ion implantation with optimum thermal annealing produces a deep buried electrical isolation layer in n-type GaAs and reduces optical absorption in GaAs/AlGaAs quantum well structures. Ion implantation stimulated compositional disordering as well as implanted oxygen-related deep level traps may be considered as important effects for electrical and optical modification of interfaces in GaAs and AIGaAs.


2010 ◽  
Vol 530 (1) ◽  
pp. 131/[287]-136/[292]
Author(s):  
Jung Soo Park ◽  
Tae Jin Park ◽  
Woo Sik Jeon ◽  
Gyeong Heon Kim ◽  
Jae Hyung Yu ◽  
...  

1987 ◽  
Vol 50 (25) ◽  
pp. 1773-1775 ◽  
Author(s):  
Pamela L. Derry ◽  
Amnon Yariv ◽  
Kam Y. Lau ◽  
Nadav Bar‐Chaim ◽  
Kevin Lee ◽  
...  

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