Fabrication and characterization of lateral InP/InGaAsP heterojunctions and bipolar transistors

1989 ◽  
Vol 54 (23) ◽  
pp. 2318-2320 ◽  
Author(s):  
H‐J. Yoo ◽  
J. R. Hayes ◽  
C. Caneau ◽  
R. Bhat ◽  
M. Koza
Keyword(s):  
Bipolar Transistors ◽  
Fabrication And Characterization

Fabrication and Characterization of InP Heterojunction Bipolar Transistors with Emitter Edges Parallel to [001] and [010] Crystal Orientations

1999 ◽  
Vol 38 (Part 1, No. 2B) ◽  
pp. 1200-1203 ◽  
Author(s):  
Noureddine Matine ◽  
Martin W. Dvorak ◽  
Jean-Luc Pelouard ◽  
Fabrice Pardo ◽  
Colombo R. Bolognesi
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Crystal Orientations ◽  
Fabrication And Characterization

Fabrication and characterization of ZnSe/GaAs heterostructure bipolar transistors grown by molecular beam epitaxy

1992 ◽  
Vol 60 (11) ◽  
pp. 1345-1347 ◽  
Author(s):  
Annette S. Glaeser ◽  
James L. Merz ◽  
Robert E. Nahory ◽  
Maria C. Tamargo
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Fabrication And Characterization

Fabrication and characterization of in situ-doped a-Si0.8C0.2 emitter bipolar transistors

2000 ◽  
Vol 44 (9) ◽  
pp. 1543-1548 ◽  
Author(s):  
A Orpella ◽  
J Puigdollers ◽  
D Bardés ◽  
R Alcubilla ◽  
L.F Marsal ◽  
...  
Keyword(s):  
Bipolar Transistors ◽  
Fabrication And Characterization

scholarly journals A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
John T Torvik ◽  
M. Leksono ◽  
J. I. Pankove ◽  
B. Van Zeghbroeck
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Bipolar Transistors ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Device Structure ◽  
Fabrication And Characterization ◽  
Dc Current

We report on the fabrication and characterization of GaN/4H-SiC n-p-n heterojunction bipolar transistors (HBTs). The device structure consists of an n-SiC collector, p-SiC base, and selectively grown n-GaN emitter. The HBTs were grown using metalorganic chemical vapor deposition on SiC substrates. Selective GaN growth through a SiO2 mask was used to avoid damage that would be caused by reactive ion etching. In this report, we demonstrate common base transistor operation with a modest dc current gain of 15 at room temperature and 3 at 300°C.

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