Effects of metalorganic chemical vapor deposition growth conditions on the GaAs/Ge solar cell properties

1991 ◽  
Vol 58 (20) ◽  
pp. 2282-2284 ◽  
Author(s):  
J. C. Chen ◽  
M. Ladle Ristow ◽  
J. I. Cubbage ◽  
J. G. Werthen
Keyword(s):  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Chemical Vapor Deposition Growth ◽  
Metalorganic Chemical

Pre-Cracking and Plasma Enhanced Metalorganic Chemical Vapor Deposition Processes for Epitaxial Hg1−xCdxTe and HgTe-CdTe Superlattice Growth

1987 ◽  
Vol 102 ◽  
Author(s):  
P.-Y. Lu ◽  
L. M. Williams ◽  
C.-H. Wang ◽  
S. N. G. Chu ◽  
M. H. Ross
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Infrared Transmission ◽  
Chemical Vapor Deposition Growth ◽  
Deposition Processes ◽  
Cdznte Substrates ◽  
First Time ◽  
Metalorganic Chemical

ABSTRACTTwo low temperature metalorganic chemical vapor deposition growth techniques, the pre-cracking method and the plasma enhanced method, will be discussed. The pre-cracking technique enables one to grow high quality epitaxial Hg1−xCdxTe on CdTe or CdZnTe substrates at temperatures around 200–250°C. HgTe-CdTe superlattices with sharp interfaces have also been fabricated. Furthermore, for the first time, we have demonstrated that ternary Hg1−xCdTe compounds and HgTe-CdTe superlattices can be successfully grown by the plasma enhanced process at temperatures as low as 135 to 150°C. Material properties such as surface morphology, infrared transmission, Hall mobility, and interface sharpness will be presented.

Effect of Slight Misorientation of Sapphire Substrate on Metalorganic Chemical Vapor Deposition Growth of GaN

1999 ◽  
Vol 38 (Part 2, No. 7A) ◽  
pp. L703-L705 ◽  
Author(s):  
Takayuki Yuasa ◽  
Yoshihiro Ueta ◽  
Yuhzoh Tsuda ◽  
Atushi Ogawa ◽  
Mototaka Taneya ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Sapphire Substrate ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Metalorganic Chemical

Development of Homoepitaxially Grown GaN Thin Film Layers on Freestanding Bulk m-plane Substrates by Metalorganic Chemical Vapor Deposition (MOCVD)

2007 ◽  
Vol 1040 ◽  
Author(s):  
Vibhu Jindal ◽  
James Grandusky ◽  
Neeraj Tripathi ◽  
Mihir Tungare ◽  
Fatemeh Shahedipour-Sandvik ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Rates ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Structural Defects ◽  
Lateral Growth ◽  
High Quality ◽  
Metalorganic Chemical

AbstractHigh quality homoepitaxial growth of m-plane GaN films on freestanding m-plane HVPE GaN substrates has been performed using metalorganic chemical vapor deposition. For this a large growth space was studied. Large areas of no-nucleation along with presence of high density of defects were observed when layers were grown under growth conditions for c-plane GaN. It is believed that these structural defects were in large part due to the low lateral growth rates as well as unequal lateral growth rates in a- and c- crystallographic directions. To achieve high quality, fully coalesced epitaxial layers, growth conditions were optimized with respect to growth temperature, V/III ratios and reactor pressure. Higher growth temperatures led to smoother surfaces due to increased surface diffusion of adatoms. Overall, growth at higher temperature and lower V/III ratio decreased the surface roughness and resulted in better optical properties as observed by photoluminescence. Although optimization resulted in highly smooth layers, some macroscopic defects were still observed on the epi-surface as a result of contamination and subsurface damage remaining on bulk substrates possibly due to polishing. Addition of a step involving annealing of the bulk substrate under H2: N2 environment, prior to growth, drastically reduced such macroscopic defects.

High Quality InP Epitaxial Growth Using Flow Rate Modulation Metalorganic Chemical Vapor Deposition

1997 ◽  
Vol 08 (04) ◽  
pp. 575-586
Author(s):  
M. K. Lee ◽  
C. C. Hu
Keyword(s):  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Atomic Scale ◽  
Optimum Growth ◽  
Rate Modulation ◽  
Metalorganic Chemical

The characteristics of modified flow rate modulation metalorganic chemical deposition is studied. From observation with the atomic force microscope, the flatness of a InP homoepitaxial layer is improved to atomic scale by phosphine modulation metalorganic chemical vapor deposition. The full width at half maximum 5.6 meV of photoluminescence at 77 K can be achieved under optimum growth conditions. The satellite peak around the near band emission can also be reduced to a negligible quantity under optimum growth conditions. Also, MFME can improve the electrical characteristics of the epilayer with higher electron mobility and lower compensation ratio.

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