Field‐effect conductance activation energy in an undoped polycrystalline silicon thin‐film transistor

1991 ◽  
Vol 59 (2) ◽  
pp. 172-174 ◽  
Author(s):  
C. A. Dimitriadis ◽  
N. A. Economou ◽  
P. A. Coxon
Keyword(s):  
Thin Film ◽  
Activation Energy ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Silicon Thin Film

Effect Of O2 Plasma Exposure On The Performance Of Polycrystalline Silicon Thin Film Transistors

1994 ◽  
Vol 345 ◽  
Author(s):  
Chul Ha Kim ◽  
Il Lee ◽  
Ki Soo Sohn ◽  
Su Chul Chun ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Plasma Exposure ◽  
Silicon Thin Film ◽  
Current Ratio ◽  
Si Thin Film ◽  
O2 Plasma

AbstractWe have studied the effect of O2 plasma exposure on the performance of polycrystalline silicon (poly-Si) thin film transistor (TFTs). The field effect mobility is increased and the drain currents at negative gate voltages are reduced by O2 plasma exposure on the surface of the TFT. These improvements in the performance of the poly-Si TFTs are larger in offset structure compared to overlap one. We obtained the on/off current ratio of ∼ 108 after O2 plasma exposure for the poly-Si TFTs with 3 or 4 μm offset length.

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

A Center-Offset Polycrystalline-Silicon Thin-Film Transistor With ${\rm n}^{+}$ Amorphous-Silicon Contacts

2009 ◽  
Vol 30 (1) ◽  
pp. 36-38 ◽  
Author(s):  
J. H. Oh ◽  
D. H. Kang ◽  
W. H. Park ◽  
J. Jang ◽  
Y. J. Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film

A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage

2003 ◽  
Vol 42 (Part 1, No. 3) ◽  
pp. 1164-1167 ◽  
Author(s):  
Du-Zen Peng ◽  
Ting-Chang Chang ◽  
Chin-Fu Liu ◽  
Ping-Hung Yeh ◽  
Po-Tsun Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Breakdown Voltage ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film

Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain

2002 ◽  
Vol 81 (25) ◽  
pp. 4763-4765 ◽  
Author(s):  
Du Zen Peng ◽  
Ting-Chang Chang ◽  
Po-Sheng Shih ◽  
Hsiao-Wen Zan ◽  
Tiao-Yuan Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film
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