Interface State Generation in p-Type Si Metal/ Oxide/ Semiconductor Capacitors due to Fowler-Nordheim Tunneling Current Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l1315 ◽

1995 ◽

Vol 34 (Part 2, No. 10B) ◽

pp. L1315-L1317 ◽

Author(s):

Masao Inoue ◽

Junji Shirafuji

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Stress ◽

State Generation ◽

P Type ◽

Nordheim Tunneling

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Charge trapping and interface state generation in metal‐oxide‐semiconductor capacitors due to Fowler–Nordheim tunneling injection at low temperatures

Journal of Applied Physics ◽

10.1063/1.345082 ◽

1990 ◽

Vol 67 (11) ◽

pp. 6903-6907 ◽

Author(s):

M. Sakashita ◽

S. Zaima ◽

Y. Yasuda

Keyword(s):

Metal Oxide ◽

Low Temperatures ◽

Charge Trapping ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

State Generation ◽

Tunneling Injection ◽

Nordheim Tunneling

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Extra interface state generation enhanced by fluorine in tungsten‐polycided metal‐oxide‐semiconductor devices with nitrided oxide gate dielectric

Applied Physics Letters ◽

10.1063/1.114493 ◽

1995 ◽

Vol 67 (10) ◽

pp. 1456-1458 ◽

Author(s):

C. W. Chen ◽

Y. K. Fang ◽

G. Y. Lee ◽

J. C. Hsieh ◽

M. S. Liang

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

State Generation

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Measurements of the widths of transition regions at Si–SiO2 interfaces in metal-oxide–semiconductor structures from quantum oscillations in Fowler–Nordheim tunneling current

Solid State Communications ◽

10.1016/s0038-1098(01)00221-6 ◽

2001 ◽

Vol 119 (2) ◽

pp. 67-71 ◽

Author(s):

Lingfeng Mao ◽

Changhua Tan ◽

Mingzhen Xu

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Oscillations ◽

Semiconductor Structures ◽

Nordheim Tunneling

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Transconductance degradation and interface state generation in metal‐oxide‐semiconductor field‐effect transistors with oxynitride gate dielectrics under hot‐carrier stress

Applied Physics Letters ◽

10.1063/1.102819 ◽

1990 ◽

Vol 56 (3) ◽

pp. 250-252 ◽

Author(s):

G. Q. Lo ◽

W. C. Ting ◽

D. K. Shih ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress ◽

State Generation

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An effective-field approach for the Fowler–Nordheim tunneling current through a metal–oxide–semiconductor charged barrier

Journal of Applied Physics ◽

10.1063/1.366535 ◽

1997 ◽

Vol 82 (3) ◽

pp. 1262-1265 ◽

Author(s):

E. Miranda ◽

G. Redin ◽

A. Faigón

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Effective Field ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Field Approach ◽

Nordheim Tunneling

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Interface state density of SiO2/p-type 4H-SiC ( 0001), ( 112¯0), ( 11¯00) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes

Applied Physics Letters ◽

10.1063/1.4946863 ◽

2016 ◽

Vol 108 (15) ◽

pp. 152108 ◽

Author(s):

Takuma Kobayashi ◽

Seiya Nakazawa ◽

Takafumi Okuda ◽

Jun Suda ◽

Tsunenobu Kimoto

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

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Oxide-Voltage and Its Polarity Dependence of Interface-State-Generation Efficiency in (100) n-Si Metal/Oxide/Semiconductor Capacitors

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.5921 ◽

1996 ◽

Vol 35 (Part 1, No. 12A) ◽

pp. 5921-5924 ◽

Author(s):

Masao Inoue ◽

Akihiro Shimada ◽

Junji Shirafuji

Keyword(s):

Metal Oxide ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Generation Efficiency ◽

State Generation

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Interface state generation associated with hole transport in metal‐oxide‐semiconductor structures

Journal of Applied Physics ◽

10.1063/1.337618 ◽

1986 ◽

Vol 60 (1) ◽

pp. 448-449 ◽

Author(s):

H. E. Boesch ◽

F. B. McLean

Keyword(s):

Metal Oxide ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Hole Transport ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

State Generation

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Positive charge and interface state generation in a thin gate oxide (30 nm) metal‐oxide‐semiconductor capacitor

Journal of Applied Physics ◽

10.1063/1.356396 ◽

1994 ◽

Vol 75 (3) ◽

pp. 1592-1598 ◽

Author(s):

Abdelillah El‐Hdiy

Keyword(s):

Metal Oxide ◽

Positive Charge ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

State Generation ◽

Thin Gate Oxide ◽

Metal Oxide Semiconductor Capacitor

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Relationship between interface state generation and substrate hole current in InGaAs metal-oxide-semiconductor (MOS) interfaces

Journal of Applied Physics ◽

10.1063/1.5031052 ◽

2018 ◽

Vol 123 (23) ◽

pp. 234502

Author(s):

S.-H. Yoon ◽

D.-H. Ahn ◽

M. Takenaka ◽

S. Takagi

Keyword(s):

Metal Oxide ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

State Generation ◽

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