Instability mechanisms for the hydrogenated amorphous silicon thin‐film transistors with negative and positive bias stresses on the gate electrodes

1995 ◽  
Vol 67 (1) ◽  
pp. 76-78 ◽  
Author(s):  
Ya‐Hsiang Tai ◽  
Jun‐Wei Tsai ◽  
Huang‐Chung Cheng ◽  
Feng‐Cheng Su
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Positive Bias ◽  
Silicon Thin Film ◽  
Gate Electrodes ◽  
Hydrogenated Amorphous

Performance of thin hydrogenated amorphous silicon thin‐film transistors

1991 ◽  
Vol 69 (4) ◽  
pp. 2339-2345 ◽  
Author(s):  
J. Kanicki ◽  
F. R. Libsch ◽  
J. Griffith ◽  
R. Polastre
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Hydrogenated Amorphous

Temperature dependence of hydrogenated amorphous silicon thin-film transistors

1995 ◽  
Vol 30 (9) ◽  
pp. 2254-2256 ◽  
Author(s):  
Bor -Yir Chen ◽  
Wei -Hsiung Wu ◽  
Jiann -Ruey Chen ◽  
Chum -Sam Hong
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Hydrogenated Amorphous
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