Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy

1997 ◽  
Vol 71 (24) ◽  
pp. 3543-3545 ◽  
Author(s):  
Xun Wang ◽  
Zui-min Jiang ◽  
Hai-jun Zhu ◽  
Fang Lu ◽  
Daming Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Size Distribution ◽  
Molecular Beam ◽  
Uniform Size ◽  
Highly Uniform ◽  
Uniform Size Distribution

Growth of highly uniform size-distribution ZnO NR arrays on sputtered ZnO thin film via hydrothermal with PMMA template assisted

2020 ◽  
Vol 105 ◽  
pp. 104736 ◽  
Author(s):  
Nantarat Srisuai ◽  
Sakoolkan Boonruang ◽  
Mati Horprathum ◽  
Pongsak Sarapukdee ◽  
Somyod Denchitcharoen
Keyword(s):  
Thin Film ◽  
Size Distribution ◽  
Zno Thin Film ◽  
Uniform Size ◽  
Highly Uniform ◽  
Uniform Size Distribution

Synthesis of LiCoO2 particles with tunable sizes by a urea-based-homogeneous-precipitation method

2020 ◽  
Vol 111 (4) ◽  
pp. 347-355
Author(s):  
Munekazu Motoyama ◽  
Hiroki Iwasaki ◽  
Miyuki Sakakura ◽  
Takayuki Yamamoto ◽  
Yasutoshi Iriyama
Keyword(s):  
Size Distribution ◽  
Average Diameter ◽  
Precipitation Method ◽  
Homogeneous Precipitation ◽  
Uniform Size ◽  
Homogeneous Precipitation Method ◽  
Wide Range ◽  
Size Uniformity ◽  
Average Size ◽  
Uniform Size Distribution

Abstract This paper reports the synthesis of monodisperse spherical LiCoO2 particles in a wide range of average diameter using a urea-based-uniform-precipitation method. The average diameter of LiCoO2 particles can be varied from 2 to 14 lm with a uniform size distribution. The effective approach to maintain the size uniformity while changing the average size of LiCoO2 particles is to keep the ratio of [CO(NH2)2] to [CoSO4] at 8 even when the CoSO4 and urea concentrations are changed.

Computer Simulation of the Early Stages of Nano Scale SiC Growth on Si

2005 ◽  
Vol 483-485 ◽  
pp. 169-172
Author(s):  
K.L. Safonov ◽  
Yuri V. Trushin ◽  
Oliver Ambacher ◽  
Jörg Pezoldt
Keyword(s):  
Computer Simulation ◽  
Silicon Carbide ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Size Distribution ◽  
Rate Equation ◽  
Molecular Beam ◽  
Carbon Fluxes ◽  
Island Size ◽  
Nano Scale

Solid source molecular beam epitaxy was applied to create silicon carbide nanoclusters on silicon. The island size distribution can be controlled by an appropriate substrate temperature, carbon fluxes and process times. Rate equation computer simulation was applied to simulate the experimental obtained nano scale nuclei properties.

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