High-dose oxygen ion implantation into 6H-SiC

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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Formation of Abrupt Interfaces between Surface Silicon and Buried SiO2Layers by Very High Dose Oxygen-Ion Implantation

Japanese Journal of Applied Physics ◽

10.1143/jjap.19.1005 ◽

1980 ◽

Vol 19 (5) ◽

pp. 1005-1006 ◽

Cited By ~ 34

Author(s):

Takayoshi Hayashi ◽

Hamao Okamoto ◽

Yoshikazu Homma

Keyword(s):

Ion Implantation ◽

High Dose ◽

Oxygen Ion ◽

Oxygen Ion Implantation ◽

Very High

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Synthesis of oxides in Si0.5Ge0.5 alloy by high dose oxygen ion implantation

Materials Science and Engineering B ◽

10.1016/0921-5107(92)90286-i ◽

1992 ◽

Vol 12 (1-2) ◽

pp. 199-203 ◽

Cited By ~ 8

Author(s):

J.E. Castle ◽

H.D. Liu ◽

J.F. Watts ◽

P.L.F. Hemment ◽

J.P. Zhang ◽

...

Keyword(s):

Ion Implantation ◽

High Dose ◽

Oxygen Ion ◽

Oxygen Ion Implantation

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Target temperature dependence on titanium oxide formation by high-dose oxygen ion implantation into titanium sheets

Materials Science and Engineering A ◽

10.1016/0921-5093(89)90660-6 ◽

1989 ◽

Vol 115 ◽

pp. 79-82 ◽

Cited By ~ 8

Author(s):

Yoshio Okabe ◽

Masaya Iwaki ◽

Katsuo Takahashi

Keyword(s):

Ion Implantation ◽

Temperature Dependence ◽

Titanium Oxide ◽

High Dose ◽

Target Temperature ◽

Oxide Formation ◽

Oxygen Ion ◽

Oxygen Ion Implantation

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Nanomechanical properties of energetically treated polyethylene surfaces

Journal of Materials Research ◽

10.1557/jmr.2002.0059 ◽

2002 ◽

Vol 17 (2) ◽

pp. 423-430 ◽

Cited By ~ 21

Author(s):

C. Klapperich ◽

L. Pruitt ◽

K. Komvopoulos

Keyword(s):

Mechanical Properties ◽

Low Temperature ◽

Ion Implantation ◽

Ion Beam ◽

Plasma Modification ◽

High Dose ◽

Oxygen Ion ◽

Ion Beam Treatment ◽

Argon Ion ◽

Oxygen Ion Implantation

The effects of energetic treatments, crosslinking, and plasma modification on the surface mechanical properties and deformation behavior of ultrahigh molecular weight polyethylene (UHMWPE) were examined in light of nanoindentation experiments performed with a surface force microscope. Samples of UHMWPE were subjected to relatively high-dose gamma irradiation, oxygen ion implantation, and argon ion beam treatment. A range of crosslinking was achieved by varying the radiation dose. In addition, low-temperature plasma treatment with hexamethyldisiloxane/O2 and C3F6 was investigated for comparison. The surface mechanical properties of the treated UHMWPE samples are compared with those of untreated UHMWPE samples used as controls. Surface adhesion measurements obtained from the nanoindentation material responses are also discussed in terms of important treatment parameters. Results demonstrate that high-dose oxygen ion implantation, argon ion beam treatment, and low-temperature C3F6 plasma modification are effective treatments for enhancing the surface mechanical properties of UHMWPE.

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