Dynamics of the excimer laser annealing of hydrogenated amorphous silicon thin films

1999 ◽  
Vol 75 (4) ◽  
pp. 498-500 ◽  
Author(s):  
G. Ivlev ◽  
E. Gatskevich ◽  
V. Cháb ◽  
J. Stuchlı́k ◽  
V. Vorlı́ček ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films ◽  
Hydrogenated Amorphous

Nucleation Process During Excimer Laser Annealing of Amorphous Silicon Thin Films on Glass: A Molecular-dynamics Study

2006 ◽  
Vol 958 ◽  
Author(s):  
Shinji Munetoh ◽  
Takanori Mitani ◽  
Takahide Kuranaga ◽  
Teruaki Motooka
Keyword(s):  
Thin Films ◽  
Molecular Dynamics ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Surface Region ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films ◽  
Steady State Temperature ◽  
Dynamics Simulations

ABSTRACTWe have performed molecular-dynamics simulations of heating, melting and recrystallization processes in amorphous silicon (a-Si) thin films deposited on glass during excimer laser annealing. By partially heating the a-Si surface region with 2 nm depth and removing thermal energy from the bottom of the glass substrate, a steady-state temperature profile was obtained in the a-Si layer with the thickness of 15 nm and only the surface region was melted. It was found that nucleation predominantly occurred in the a-Si region as judged by the coordination numbers and diffusion constants of atoms in the region. The results suggest that nucleation occurs in unmelted residual a-Si region during the laser irradiation and then crystal growth proceeds toward liquid Si region under the near-complete melting condition.

Transient temperature measurement of amorphous silicon thin films during excimer laser annealing

1999 ◽  
Author(s):  
Seung-Jae Moon ◽  
Ming-Hong Lee ◽  
Mutsuko Hatano ◽  
Kenkichi Suzuki ◽  
Constantine P. Grigoropoulos
Keyword(s):  
Thin Films ◽  
Temperature Measurement ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Transient Temperature ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films

scholarly journals Formation of Si nanoclusters in amorphous silicon thin films by excimer laser annealing

1999 ◽  
Vol 35 (23) ◽  
pp. 2058 ◽  
Author(s):  
Jiun-Lin Yeh ◽  
Hsuen-Li Chen ◽  
An Shih ◽  
Si-chen Lee
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films

Effect of Nitrogen Doping on the Structure and Optical Properties of N-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 383-390 ◽  
pp. 6980-6985
Author(s):  
Mao Yang Wu ◽  
Wei Li ◽  
Jun Wei Fu ◽  
Yi Jiao Qiu ◽  
Ya Dong Jiang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Frequency Plasma ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) thin films doped with both Phosphor and Nitrogen are deposited by ratio frequency plasma enhanced chemical vapor deposition (PECVD). The effect of gas flow rate of ammonia (FrNH3) on the composition, microstructure and optical properties of the films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and ellipsometric spectra, respectively. The results show that with the increase of FrNH3, Si-N bonds appear while the short-range order deteriorate in the films. Besides, the optical properties of N-doped n-type a-Si:H thin films can be easily controlled in a PECVD system.

Crystal Growth of Silicon Thin Films on Glass by Excimer Laser Annealing: A Molecular-Dynamics Study

2006 ◽  
Vol 45 (5B) ◽  
pp. 4344-4346 ◽  
Author(s):  
Shinji Munetoh ◽  
Takahide Kuranaga ◽  
Byoung Min Lee ◽  
Teruaki Motooka ◽  
Takahiko Endo ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Dynamics ◽  
Crystal Growth ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films
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