Large and stable field-emission current from heavily Si-doped AlN grown by metalorganic vapor phase epitaxy

A single CeB6 nanoneedle structure has been fabricated using a focused ion beam (FIB) and it shows an excellent field emission current stability as well as a single emission spot.

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Effect of Growth Conditions on Electrical Properties of Si-Doped In0.52Al0.48As Grown by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.1048 ◽

1999 ◽

Vol 38 (Part 1, No. 2B) ◽

pp. 1048-1051 ◽

Cited By ~ 4

Author(s):

Shu Goto ◽

Takashi Ueda ◽

Tomoyuki Ohshima ◽

Hiroaki Kakinuma

Keyword(s):

Electrical Properties ◽

Vapor Phase ◽

Growth Conditions ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Si Doped

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Si-doped β-(Al0.26Ga0.74)2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy

Applied Physics Express ◽

10.7567/1882-0786/ab47b8 ◽

2019 ◽

Vol 12 (11) ◽

pp. 111004 ◽

Cited By ~ 17

Author(s):

Praneeth Ranga ◽

Ashwin Rishinaramangalam ◽

Joel Varley ◽

Arkka Bhattacharyya ◽

Daniel Feezell ◽

...

Keyword(s):

Thin Films ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Si Doped

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Impacts of Si-doping on vacancy complex formation and their influences on deep ultraviolet luminescence dynamics in Al x Ga1-x N films and multiple quantum wells grown by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ac46b1 ◽

2021 ◽

Author(s):

Shigefusa F. Chichibu ◽

Hideto MIYAKE ◽

Akira Uedono

Keyword(s):

Quantum Wells ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Multiple Quantum ◽

Nonradiative Recombination ◽

Si Doping ◽

Deep Ultraviolet ◽

Si Doped ◽

Recombination Centers

Abstract To give a clue for increasing emission efficiencies of Al x Ga1-x N-based deep ultraviolet light emitters, the origins and influences on carrier concentration and minority carrier lifetime (τminority), which determines the internal quantum efficiency, of midgap recombination centers in c-plane Si-doped Al0.60Ga0.40N epilayers and Al0.68Ga0.32N quantum wells (QWs) grown by metalorganic vapor phase epitaxy were studied by temporally and spatially resolved luminescence measurements, making a correlation with the results of positron annihilation measurement. For the Al0.60Ga0.40N epilayers, τminority decreased as the concentration of cation vacancies (VIII) increased, indicating that VIII, most probably decorated with nitrogen vacancies (VN), VIII(VN) n , are major nonradiative recombination centers (NRCs). For heavily Si-doped Al0.60Ga0.40N, a generation of electron-compensating complexes (VIII-SiIII) is suggested. For lightly Si-doping regime, τminority of the QW emission was increased by appropriate Si-doping in the wells, which simultaneously increased the terrace width. The importance of wetting conditions is suggested for decreasing the NRC concentration.

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