High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Chemical Vapor ◽

Hole Mobility ◽

Oxide Semiconductor

P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si1-xGex Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System

10.1143/jjap.38.l1099 ◽

1999 ◽

Vol 38 (Part 2, No. 10A) ◽

pp. L1099-L1101 ◽

Cited By ~ 4

Author(s):

Kun-Ming Chen ◽

Hsiang-Jen Huang ◽

Guo-Wei Huang ◽

Chun-Yen Chang ◽

Liang-Po Chen

Keyword(s):

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

High Vacuum ◽

Chemical Vapor ◽

Ultra High Vacuum ◽

Oxide Semiconductor

Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO2Gate Dielectrics

10.1143/jjap.42.7256 ◽

2003 ◽

Vol 42 (Part 1, No. 12) ◽

pp. 7256-7258 ◽

Cited By ~ 6

Author(s):

Sungjoo Lee ◽

Dim-Lee Kwong

Keyword(s):

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Chemical Vapor ◽

Oxide Semiconductor ◽

High Quality

Investigation of silicon—germanium metal-oxide-semiconductor field-effect transistors grown by laser-assisted plasma-enhanced chemical vapor deposition

2008 5th IEEE International Conference on Group IV Photonics ◽

10.1109/group4.2008.4638131 ◽

2008 ◽

Author(s):

Ching-Ting Lee ◽

Jian-Gang Lin ◽

Hsin-Ying Lee

Keyword(s):

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Chemical Vapor ◽

Oxide Semiconductor

$\bf SiO_{2}/InP$ Structure Prepared by Direct Photo-Chemical Vapor Deposition Using Deuterium Lamp and Its Applications to Metal-Oxide-Semiconductor Field-Effect Transistor

10.1143/jjap.34.476 ◽

1995 ◽

Vol 34 (Part 1, No. 2A) ◽

pp. 476-481 ◽

Cited By ~ 2

Author(s):

Shih-Chang Shei ◽

Yan-Kuin Su ◽

Chih-Jen Hwang ◽

Meiso Yokoyama

Keyword(s):

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Deuterium Lamp

Noise Analysis of Nitride-Based Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors with Photo-Chemical Vapor Deposition SiO2Gate Oxide in the Linear and Saturation Regions

10.1143/jjap.45.3405 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3405-3409 ◽

Cited By ~ 6

Author(s):

Yu-Zung Chiou ◽

Yan-Kuin Su ◽

Jeng Gong ◽

Shoou-Jinn Chang ◽

Chun-Kai Wang

Keyword(s):

Vapor Deposition ◽

Field Effect ◽

Noise Analysis ◽

Chemical Vapor ◽

Heterostructure Field Effect Transistors

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Fabrication of a Si1-xGexChannel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition

10.1143/jjap.32.438 ◽

1993 ◽

Vol 32 (Part 1, No. 1B) ◽

pp. 438-441 ◽

Cited By ~ 35

Author(s):

Kinya Goto ◽

Junichi Murota ◽

Takahiro Maeda ◽

Reiner SchÜtz ◽

Kiyohito Aizawa ◽

...

Keyword(s):

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Oxide Semiconductor ◽

Pressure Chemical ◽

Detailed investigation of InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photo-enhanced chemical vapor deposition

IEEE Transactions on Electron Devices ◽

10.1109/16.381972 ◽

1995 ◽

Vol 42 (5) ◽

pp. 795-803 ◽

Cited By ~ 2

Author(s):

Biing-Der Liu ◽

Si-Chen Lee ◽

Tai-Ping Sun ◽

Sheng-Jenn Yang

Keyword(s):

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Oxide Semiconductor ◽

High breakdown voltage InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photoenhanced chemical vapor deposition

10.1117/12.179699 ◽

1994 ◽

Cited By ~ 1

Author(s):

Biing-Der Liu ◽

Si-Chen Lee ◽

Kou-Chen Liu ◽

Tai Ping Sun ◽

Sheng-Jehn Yang

Keyword(s):

Metal Oxide ◽

Breakdown Voltage ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Oxide Semiconductor ◽

InSbp‐channel metal‐oxide‐semiconductor field‐effect transistor prepared by photoenhanced chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.110068 ◽

1993 ◽

Vol 63 (26) ◽

pp. 3622-3624 ◽

Cited By ~ 4

Author(s):

Biing‐Der Liu ◽

Si‐Chen Lee ◽

Kou‐Chen Liu ◽

Tai‐Ping Sun ◽

Sheng‐Jehn Yang

Keyword(s):

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Oxide Semiconductor ◽

Impacts of Low-Pressure Chemical Vapor Deposition-SiN Capping Layer and Lateral Distribution of Interface Traps on Hot-Carrier Stress of n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistors

10.1143/jjap.46.2027 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2027-2031 ◽

Cited By ~ 3

Author(s):

Ching-Sen Lu ◽

Horng-Chih Lin ◽

Jian-Ming Huang ◽

Chia-Yu Lu ◽

Yao-Jen Lee ◽

...

Keyword(s):

Vapor Deposition ◽

Field Effect ◽

Chemical Vapor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Hot Carrier ◽

Pressure Chemical