Noise Analysis of Nitride-Based Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors with Photo-Chemical Vapor Deposition SiO2Gate Oxide in the Linear and Saturation Regions
2006 ◽
Vol 45
(4B)
◽
pp. 3405-3409
◽
2005 ◽
Vol 44
(4B)
◽
pp. 2465-2468
◽
1999 ◽
Vol 38
(Part 2, No. 10A)
◽
pp. L1099-L1101
◽
2003 ◽
Vol 42
(Part 1, No. 12)
◽
pp. 7256-7258
◽
2003 ◽
Vol 32
(5)
◽
pp. 407-410
◽
2007 ◽
Vol 46
(4B)
◽
pp. 2027-2031
◽
2020 ◽
Vol 8
◽
pp. 9-14
◽