Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO2Gate Dielectrics

Sungjoo Lee; Dim-Lee Kwong

doi:10.1143/jjap.42.7256

Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO2Gate Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.7256 ◽

2003 ◽

Vol 42 (Part 1, No. 12) ◽

pp. 7256-7258 ◽

Cited By ~ 6

Author(s):

Sungjoo Lee ◽

Dim-Lee Kwong

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Quality

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P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si1-xGex Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l1099 ◽

1999 ◽

Vol 38 (Part 2, No. 10A) ◽

pp. L1099-L1101 ◽

Cited By ~ 4

Author(s):

Kun-Ming Chen ◽

Hsiang-Jen Huang ◽

Guo-Wei Huang ◽

Chun-Yen Chang ◽

Liang-Po Chen

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

High Vacuum ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Ultra High Vacuum ◽

Oxide Semiconductor

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High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.126821 ◽

2000 ◽

Vol 76 (26) ◽

pp. 3920-3922 ◽

Cited By ~ 69

Author(s):

G. Höck ◽

E. Kohn ◽

C. Rosenblad ◽

H. von Känel ◽

H.-J. Herzog ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Investigation of silicon—germanium metal-oxide-semiconductor field-effect transistors grown by laser-assisted plasma-enhanced chemical vapor deposition

2008 5th IEEE International Conference on Group IV Photonics ◽

10.1109/group4.2008.4638131 ◽

2008 ◽

Author(s):

Ching-Ting Lee ◽

Jian-Gang Lin ◽

Hsin-Ying Lee

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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$\bf SiO_{2}/InP$ Structure Prepared by Direct Photo-Chemical Vapor Deposition Using Deuterium Lamp and Its Applications to Metal-Oxide-Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.476 ◽

1995 ◽

Vol 34 (Part 1, No. 2A) ◽

pp. 476-481 ◽

Cited By ~ 2

Author(s):

Shih-Chang Shei ◽

Yan-Kuin Su ◽

Chih-Jen Hwang ◽

Meiso Yokoyama

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Deuterium Lamp

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Noise Analysis of Nitride-Based Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors with Photo-Chemical Vapor Deposition SiO2Gate Oxide in the Linear and Saturation Regions

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3405 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3405-3409 ◽

Cited By ~ 6

Author(s):

Yu-Zung Chiou ◽

Yan-Kuin Su ◽

Jeng Gong ◽

Shoou-Jinn Chang ◽

Chun-Kai Wang

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Noise Analysis ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Fabrication of a Si1-xGexChannel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.438 ◽

1993 ◽

Vol 32 (Part 1, No. 1B) ◽

pp. 438-441 ◽

Cited By ~ 35

Author(s):

Kinya Goto ◽

Junichi Murota ◽

Takahiro Maeda ◽

Reiner SchÜtz ◽

Kiyohito Aizawa ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Pressure Chemical ◽

Effect Transistor

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Detailed investigation of InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photo-enhanced chemical vapor deposition

IEEE Transactions on Electron Devices ◽

10.1109/16.381972 ◽

1995 ◽

Vol 42 (5) ◽

pp. 795-803 ◽

Cited By ~ 2

Author(s):

Biing-Der Liu ◽

Si-Chen Lee ◽

Tai-Ping Sun ◽

Sheng-Jenn Yang

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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High breakdown voltage InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photoenhanced chemical vapor deposition

10.1117/12.179699 ◽

1994 ◽

Cited By ~ 1

Author(s):

Biing-Der Liu ◽

Si-Chen Lee ◽

Kou-Chen Liu ◽

Tai Ping Sun ◽

Sheng-Jehn Yang

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Breakdown Voltage ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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InSbp‐channel metal‐oxide‐semiconductor field‐effect transistor prepared by photoenhanced chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.110068 ◽

1993 ◽

Vol 63 (26) ◽

pp. 3622-3624 ◽

Cited By ~ 4

Author(s):

Biing‐Der Liu ◽

Si‐Chen Lee ◽

Kou‐Chen Liu ◽

Tai‐Ping Sun ◽

Sheng‐Jehn Yang

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Impacts of Low-Pressure Chemical Vapor Deposition-SiN Capping Layer and Lateral Distribution of Interface Traps on Hot-Carrier Stress of n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2027 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2027-2031 ◽

Cited By ~ 3

Author(s):

Ching-Sen Lu ◽

Horng-Chih Lin ◽

Jian-Ming Huang ◽

Chia-Yu Lu ◽

Yao-Jen Lee ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Hot Carrier ◽

Pressure Chemical

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