On-wafer characterization of thermomechanical properties of dielectric thin films by a bending beam technique

2000 ◽  
Vol 88 (5) ◽  
pp. 3029-3038 ◽  
Author(s):  
Jie-Hua Zhao ◽  
Todd Ryan ◽  
Paul S. Ho ◽  
Andrew J. McKerrow ◽  
Wei-Yan Shih
Keyword(s):  
Thin Films ◽  
Thermomechanical Properties ◽  
Dielectric Thin Films ◽  
Beam Technique

Mechanical characterization of low-k and barrier dielectric thin films

2005 ◽  
Vol 82 (3-4) ◽  
pp. 368-373 ◽  
Author(s):  
N. Chérault ◽  
G. Carlotti ◽  
N. Casanova ◽  
P. Gergaud ◽  
C. Goldberg ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Characterization ◽  
Dielectric Thin Films ◽  
Low K

Micromechanical Characterization of Dielectric Thin Films

1993 ◽  
Vol 308 ◽  
Author(s):  
James M. Grow
Keyword(s):  
Thin Films ◽  
Young’S Modulus ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Silicon Carbonitride ◽  
Dielectric Thin Films ◽  
Micromechanical Characterization

ABSTRACTA nanoindenter has been used to obtain Young's modulus and hardness data for a variety of dielectric thin films including silicon carbide, boron nitride, silicon carbonitride, and silicon oxide. These films, were synthesized by low pressure and plasma enhanced chemical vapor deposition, and had a thickness from 0.25 to a few microns. For the BN films, the modulus and hardness of the films decreased significantly as the deposition temperature increased while the reverse was true for the SiC films. In both cases, these changes were related to variations in the compositions of the deposits due to the onset of different reactions as the temperature is increased. Silicon carbonitride films oxidized slowly when synthesized at temperatures below 200º C and the Young's modulus of these films increased at higher deposition temperatures. For silicon dioxide, there was little change in the composition of the films over the deposition temperature range investigated (375–475º C), thus correspondingly, small variations in the micromechanical properties of the material. However, moisture and hydrogen removal caused by an anneal at 800º C resulted in an significant increase in the modulus and hardness of these films.

Recursive Image Charge Approach for Quantitative Characterization of Dielectric Thin Film Library Using Scanning Tip Microwave Near-field Microscopy

2003 ◽  
Vol 804 ◽  
Author(s):  
Chen Gao ◽  
Bo Hu ◽  
Mengming Huang ◽  
Pu Zhang ◽  
Wen-han Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Near Field ◽  
Image Charge ◽  
Film Library ◽  
Quantitative Characterization ◽  
Dielectric Thin Films ◽  
Dielectric Thin Film

ABSTRACTWe developed a recursive image charge approach for quantitative characterizations of dielectric thin films using the scanning tip microwave near-field microscope. With this method, frequency shift of the microscope as functions of the dielectric constant and the thickness of a film can be effectively computed in a recursive way. We believe that this approach can promote the high-throughput characterization of the dielectric libraries.

scholarly journals Characterization of ITO/CdO/glass thin films evaporated by electron beam technique

2008 ◽  
Vol 9 (2) ◽  
pp. 025016 ◽  
Author(s):  
Hussein Abdel-Hafez Mohamed ◽  
Hazem Mahmoud Ali
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Beam Technique

Thermal characterization of dielectric thin films using an improved genetic algorithm

2004 ◽  
Vol 35 (3-6) ◽  
pp. 239-252 ◽  
Author(s):  
Bogdan Popescu ◽  
Yves Scudeller ◽  
Thierry Brousse ◽  
Bertrand Garnier
Keyword(s):  
Thin Films ◽  
Genetic Algorithm ◽  
Thermal Characterization ◽  
Improved Genetic Algorithm ◽  
Dielectric Thin Films

Chemical solution deposition (CSD) and characterization of ferroelectric and dielectric thin films

1998 ◽  
Vol 22 (1-4) ◽  
pp. 1-11 ◽  
Author(s):  
N. Solayappan ◽  
V. Joshi ◽  
A. DeVilbiss ◽  
J. Bacon ◽  
J. Cuchiaro ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Dielectric Thin Films ◽  
Solution Deposition
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