Recursive Image Charge Approach for Quantitative Characterization of Dielectric Thin Film Library Using Scanning Tip Microwave Near-field Microscopy

2003 ◽  
Vol 804 ◽  
Author(s):  
Chen Gao ◽  
Bo Hu ◽  
Mengming Huang ◽  
Pu Zhang ◽  
Wen-han Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Near Field ◽  
Image Charge ◽  
Film Library ◽  
Quantitative Characterization ◽  
Dielectric Thin Films ◽  
Dielectric Thin Film

ABSTRACTWe developed a recursive image charge approach for quantitative characterizations of dielectric thin films using the scanning tip microwave near-field microscope. With this method, frequency shift of the microscope as functions of the dielectric constant and the thickness of a film can be effectively computed in a recursive way. We believe that this approach can promote the high-throughput characterization of the dielectric libraries.

RF Magnetron Sputtered Ba0.96Ca0.04Ti0.84Zr0.16O3 Thin Films for High Frequency Applications

2004 ◽  
Vol 833 ◽  
Author(s):  
Ali Mahmud ◽  
T. S. Kalkur ◽  
N. Cramer
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Substrate Temperature ◽  
High Frequency ◽  
Satellite Communications ◽  
Ferroelectric Thin Films ◽  
Paraelectric State ◽  
Deposited Films

ABSTRACTPerovskite ferroelectric thin films in the paraelectric state exhibit outstanding dielectric properties, even at high frequencies (>1 GHz). The tunable dielectric constant of ferroelectric thin films can be used to design frequency and phase agile components. High dielectric constant thin film ferroelectric materials in the paraelectric state have received enormous attention due to their feasibility in applications such as decoupling capacitors and tunable microwave capacitors; the latter application has been fueled by the recent explosion in wireless and satellite communications. This paper reportsBa0.96Ca 0.04Ti0.84Zr0.16O3 (BCTZ) thin films that were deposited on Pt electrodes using radio frequency magnetron sputtering at a low (450 °C) substrate temperature. Sputtered thin film BCTZ at low substrate temperature is compatible with conventional integrated circuit technology. The structural characterization of the deposited films was performed by x-ray diffraction. The electrical characterization of the films was achieved by capacitance-voltage, current-voltage, and S-parameter (via vector network analyzer) measurements. In addition, the effect of post annealing on the deposited films was investigated. A detailed understanding of both their processing and material properties is discussed for successful implementation in high frequency applications.

Dielectric Performance of (Pb1-xSrx)Nb2O6-NaNbO3 Thin Film Materials System: Substitution Effects

2017 ◽  
Vol 898 ◽  
pp. 1699-1704
Author(s):  
Fei Hu Tan ◽  
Hong Bin Zhao ◽  
Qing Meng Zhang ◽  
Feng Wei ◽  
Jun Du
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Tungsten Bronze ◽  
Breakdown Field ◽  
Substitution Effects ◽  
Tetragonal Tungsten Bronze ◽  
Dielectric Thin Films ◽  
Dielectric Performance ◽  
Breakdown Field Strength

(Pb1-xSrx)Nb2O6-NaNbO3 (PSNN) dielectric thin films, x changed from 0.4 to 0.6, were deposited by pulsed laser deposition (PLD) technology on p+-Si substrate. Post-annealing was performed on the dielectric thin films at 800oC in oxygen atmosphere for 10 minutes. The Sr-composition dependence of the dielectric performance in this thin film materials system was investigated. The results indicated that dielectric constant changing with Sr-composition in the PSNN thin films showed the shape of a parabola, resulting from the morphotropic phase boundary (MPB) effect caused by the existence of both orthorhombic and tetragonal tungsten bronze phases. The maximized dielectric constant of PSNN was 58 and the leakage current density was about 2.485×10-9 A·cm-2 by calculated at-1 V in 1 kHz. The breakdown field strength reached 220 kV/mm of the developed PSNN thin film system, which is promising in energy storage systems application.

Development of Scanning Microwave Microscope for High-Throughput Characterization of Combinatorial Dielectric Thin Film

2001 ◽  
Vol 700 ◽  
Author(s):  
Noriaki Okazaki ◽  
Parhat Ahmet ◽  
Toyohiro Chikyow ◽  
Hiroyuki Odagawa ◽  
Yasuo Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Frequency Shift ◽  
High Throughput ◽  
Accurate Determination ◽  
Dielectric Materials ◽  
Dielectric Thin Film ◽  
Outer Conductor ◽  
Microwave Microscope

AbstractA scanning microwave microscope (Sm M) for high-throughput characterization of combinatorial dielectric materials has been developed using a lumped constant resonator probe. The probe consists of a microwave oscillator module equipped with a thin conducting needle and an outer conductor ring, which detects the dielectric constant of the sample just beneath the needle as a frequency shift of the resonator. The quantitative analysis of the dielectric constant for the bulk and the thin-film samples was carried out based on the measurement of gap-length dependence of the frequency shift. The analysis method was successfully applied to the characterization of composition-spread BaxSr1-xTiO3 thin film sample. The evaluation of far-field contribution to the frequency shift was found to be crucial for the accurate determination of dielectric constant especially in the characterization of combinatorial thin films.

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

scholarly journals Microfluidic electrochemical cell for in situ structural characterization of amorphous thin-film catalysts using high-energy X-ray scattering

2019 ◽  
Vol 26 (5) ◽  
pp. 1600-1611 ◽  
Author(s):  
Gihan Kwon ◽  
Yeong-Ho Cho ◽  
Ki-Bum Kim ◽  
Jonathan D. Emery ◽  
In Soo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrochemical Cell ◽  
Porous Electrode ◽  
High Energy ◽  
Porous Electrodes ◽  
X Ray ◽  
Pdf Analysis ◽  
Thin Film Catalysts

Porous, high-surface-area electrode architectures are described that allow structural characterization of interfacial amorphous thin films with high spatial resolution under device-relevant functional electrochemical conditions using high-energy X-ray (>50 keV) scattering and pair distribution function (PDF) analysis. Porous electrodes were fabricated from glass-capillary array membranes coated with conformal transparent conductive oxide layers, consisting of either a 40 nm–50 nm crystalline indium tin oxide or a 100 nm–150 nm-thick amorphous indium zinc oxide deposited by atomic layer deposition. These porous electrodes solve the problem of insufficient interaction volumes for catalyst thin films in two-dimensional working electrode designs and provide sufficiently low scattering backgrounds to enable high-resolution signal collection from interfacial thin-film catalysts. For example, PDF measurements were readily obtained with 0.2 Å spatial resolution for amorphous cobalt oxide films with thicknesses down to 60 nm when deposited on a porous electrode with 40 µm-diameter pores. This level of resolution resolves the cobaltate domain size and structure, the presence of defect sites assigned to the domain edges, and the changes in fine structure upon redox state change that are relevant to quantitative structure–function modeling. The results suggest the opportunity to leverage the porous, electrode architectures for PDF analysis of nanometre-scale surface-supported molecular catalysts. In addition, a compact 3D-printed electrochemical cell in a three-electrode configuration is described which is designed to allow for simultaneous X-ray transmission and electrolyte flow through the porous working electrode.

scholarly journals Impact of process conditions on chemical solution deposited BNKT thin film electromechanical properties

2021 ◽  
Vol 3 (10) ◽  
Author(s):  
Kyle M. Grove ◽  
Austin Fox ◽  
David P. Cann ◽  
Song Won Ko ◽  
Peter Mardilovich ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Loss ◽  
Pyrolysis Temperature ◽  
Piezoelectric Response ◽  
Excess Properties ◽  
Process Conditions ◽  
Chemical Solution ◽  
Ramp Rate

Abstract Phase pure perovskite (1-x)Bi1/2Na1/2TiO3 – xBi1/2K1/2TiO3 (BNKT) thin films were successfully prepared via an inverse mixing order chemical solution deposition method and the impact of process conditions on film properties were observed. Process conditions evaluated included crystallization temperature and time, ramp rate, pyrolysis temperature, and cation excess. Properties measured included crystal structure, dielectric constant, dielectric loss, piezoelectric response, and ferroelectric response. A few notable trends were observed. A subtle impact on piezoelectric response was observed in films prepared using different ramp rates: 100 C per second films (d33,f = 60 ± 5 pm/V at 1 kHz), 75 °C per second films (d33,f = 55 ± 5 pm/V) and 150 C per second films (d33,f = 50 ± 5 pm/V). Films prepared using a 75 °C per second ramp rate displayed slightly higher dielectric loss (tan δ = 0.09 at 1 kHz) than films prepared using a 100 °C per second ramp rate (tan δ = 0.07 at 1 kHz) or 150 °C per second ramp rate (tan δ = 0.05 at 1 kHz). Pyrolysis temperatures greater than 350 °C are necessary to burn off organics and maximize film dielectric constant. Dielectric constant increased from 450 ± 50 at 1 kHz to 600 ± 50 at 1 kHz by increasing pyrolysis temperature from 300 to 400 °C. Excess cation amounts (for compositional control) were also evaluated and it was found films with higher amounts of Na and K excess compared to bismuth excess displayed an increase in d33,f of about 10 pm/V compared to films prepared with equivalent Bi and Na and K excess amounts. Article highlights Impact of processing conditions on inverse mixing order chemical solution deposited bismuth based thin films. Dielectric, piezoelectric, and ferroelectric properties of thin film bismuth sodium titanate-bismuth potassium titanate thin films. Developing lead-free piezoelectric actuator materials.

scholarly journals Quantitative characterization of the energy circulation in helical beams by means of near-field diffraction

2013 ◽  
Vol 21 (3) ◽  
pp. 3379 ◽  
Author(s):  
Roland A. Terborg ◽  
Karen Volke-Sepúlveda
Keyword(s):  
Near Field ◽  
Quantitative Characterization

On-wafer characterization of thermomechanical properties of dielectric thin films by a bending beam technique

2000 ◽  
Vol 88 (5) ◽  
pp. 3029-3038 ◽  
Author(s):  
Jie-Hua Zhao ◽  
Todd Ryan ◽  
Paul S. Ho ◽  
Andrew J. McKerrow ◽  
Wei-Yan Shih
Keyword(s):  
Thin Films ◽  
Thermomechanical Properties ◽  
Dielectric Thin Films ◽  
Beam Technique
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