Effects of end-of-range dislocation loops on transient enhanced diffusion of indium implanted in silicon

2000 ◽  
Vol 88 (9) ◽  
pp. 4980-4984 ◽  
Author(s):  
T. Noda ◽  
S. Odanaka ◽  
H. Umimoto
Keyword(s):  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

The Effect of Fluorine Implantation on Boron Diffusion in Metastable Si0.86 Ge0.14

2004 ◽  
Vol 810 ◽  
Author(s):  
Huda A. W. A. El Mubarek ◽  
Yun Wang ◽  
Janet M. Bonar ◽  
Peter Hemment ◽  
Peter Ashburn
Keyword(s):  
Thermal Diffusion ◽  
Sige Layer ◽  
Dislocation Loops ◽  
Boron Diffusion ◽  
Rich Region ◽  
Implantation Energy ◽  
Enhanced Diffusion ◽  
Partial Relaxation ◽  
Transient Enhanced Diffusion ◽  
Marker Layer

ABSTRACTThis paper investigates the effect of varying F+ implantation energy on boron thermal diffusion and boron transient enhanced diffusion (TED) in metastable Si0.86Ge0.14 by characterising the diffusion of a boron marker layer in samples with and without P+ and F+ implants. The effect of two F+ implantation energies (185keV and 42keV) was studied at two anneal temperatures 950°C and 1025°C. In samples implanted with P+ & 185keV F+, the fluorine suppresses boron transient enhanced diffusion completely at 950°C and suppresses thermal diffusion by 25% at 1025°C. In samples implanted with P+ & 42keV F+, the fluorine does not reduce boron transient enhanced diffusion at 950°C. This result is explained by the location of the boron marker layer in the vacancy-rich region of the fluorine damage profile for the 185keV implant but in the interstitial-rich region for the 42keV implant. Isolated dislocation loops are seen in the SiGe layer for the 185keV implant. We postulate that these loops are due to the partial relaxation of the metastable Si0.86Ge0.14 layer.

Modeling of Dislocation Loop Growth and Transient Enhanced Diffusion in Silicon for Amorphizing Implants

1996 ◽  
Vol 438 ◽  
Author(s):  
Alp H. Gencer ◽  
Scott T. Dunham
Keyword(s):  
Dislocation Loop ◽  
Silicon Wafers ◽  
Comprehensive Model ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Formation And Evolution

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). We have developed a comprehensive model which, in combination with a model and parameters for s{311} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

Fundamental Modeling of Transient Enhanced Diffusion through Extended Defect Evolution

1997 ◽  
Vol 469 ◽  
Author(s):  
A. H. Gencer ◽  
S. Chakravarthi ◽  
I. Clejan ◽  
S. T. Dunham
Keyword(s):  
Point Defect ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Fundamental Model ◽  
Transient Enhanced Diffusion ◽  
Defect Evolution

Prediction of transient enhanced diffusion (TED) requires modeling of extended defects of many types, such as {311} defects, dislocation loops, boron-interstitial clusters, arsenic precipitates, etc. These extended defects not only form individually, but they also interact with each other through changes in point defect and solute concentrations. We have developed a fundamental model which can account for the behavior of a broad range of extended defects, as well as their interactions with each other. We have successfully applied and parameterized our model to a range of systems and conditions, some of which are presented in this paper.

Transient Enhanced Diffusion of Dopants in Preamorphised Si Layers

1996 ◽  
Vol 438 ◽  
Author(s):  
A. Claverie ◽  
C. Bonafos ◽  
M. Omri ◽  
B. De Mauduit ◽  
G. Ben Assayag ◽  
...  
Keyword(s):  
Ostwald Ripening ◽  
Dislocation Loops ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Interstitial Atoms ◽  
Extrinsic Dislocation ◽  
The Mean ◽  
Boron Diffusivity ◽  
Shed Light

AbstractTransient Enhanced Diffusion (TED) of dopants in Si is the consequence of the evolution, upon annealing, of a large supersaturation of Si self-interstitial atoms left after ion bombardment. In the case of amorphizing implants, this supersaturation is located just beneath the c/a interface and evolves through the nucleation and growth of End-Of-Range (EOR) defects.For this reason, we discuss here the relation between TED and EOR defects. Modelling of the behavior of these defects upon annealing allows one to understand why and how they affect dopant diffusion. This is possible through the development of the Ostwald ripening theory applied to extrinsic dislocation loops. This theory is shown to be readily able to quantitatively describe the evolution of the defect population (density, size) upon annealing and gives access to the variations of the mean supersaturation of Si self-interstitial atoms between the loops and responsible for TED. This initial supersaturation is, before annealing, at least 5 decades larger than the equilibrium value and exponentially decays with time upon annealing with activation energies that are the same than the ones observed for TED. It is shown that this time decay is precisely at the origin of the transient enhancement of boron diffusivity through the interstitial component of boron diffusion. Side experiments shed light on the effect of the proximity of a free surface on the thermal behavior of EOR defects and allow us to quantitatively describe the space and time evolutions of boron diffusivity upon annealing of preamorphised Si layers.

scholarly journals Transient Enhanced Diffusion and Gettering of Dopants in Ion Implanted Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
S. J. Pennycook ◽  
J. Narayan ◽  
R. J. Culbertson
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Subsequent Annealing ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dopant Profile ◽  
Dopant Atoms ◽  
Ion Implanted

ABSTRACTWe have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As+ implanted Si.

Modeling of Dislocation Loop Growth and Transient Enhanced Diffusion in Silicon for Amorphizing Implants

1996 ◽  
Vol 439 ◽  
Author(s):  
Alp H. Gencer ◽  
Scott T. Dunham
Keyword(s):  
Dislocation Loop ◽  
Silicon Wafers ◽  
Comprehensive Model ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Formation And Evolution

AbstractIt has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). We have developed a comprehensive model which, in combination with a model and parameters for {311} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

Transient Enhanced Diffusion of Dopants in Preamorphised Si Layers

1996 ◽  
Vol 439 ◽  
Author(s):  
A. Claverie ◽  
C. Bonafos ◽  
M. Omri ◽  
B. De Mauduit ◽  
G. Ben Assayag ◽  
...  
Keyword(s):  
Ostwald Ripening ◽  
Dislocation Loops ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Interstitial Atoms ◽  
Extrinsic Dislocation ◽  
The Mean ◽  
Boron Diffusivity ◽  
Shed Light

AbstractTransient Enhanced Diffusion (TED) of dopants in Si is the consequence of the evolution, upon annealing, of a large supersaturation of Si self-interstitial atoms left after ion bombardment. In the case of amorphizing implants, this supersaturation is located just beneath the c/a interface and evolves through the nucleation and growth of End-Of-Range (EOR) defects.For this reason, we discuss here the relation between TED and EOR defects. Modelling of the behavior of these defects upon annealing allows one to understand why and how they affect dopant diffusion. This is possible through the development of the Ostwald ripening theory applied to extrinsic dislocation loops. This theory is shown to be readily able to quantitatively describe the evolution of the defect population (density, size) upon annealing and gives access to the variations of the mean supersaturation of Si self-interstitial atoms between the loops and responsible for TED. This initial supersaturation is, before annealing, at least 5 decades larger than the equilibrium value and exponentially decays with time upon annealing with activation energies that are the same than the ones observed for TED. It is shown that this time decay is precisely at the origin of the transient enhancement of boron diffusivity through the interstitial component of boron diffusion. Side experiments shed light on the effect of the proximity of a free surface on the thermal behavior of EOR defects and allow us to quantitatively describe the space and time evolutions of boron diffusivity upon annealing of preamorphised Si layers.

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