Quantitative two-dimensional carrier profiling of a 400 nm complementary metal–oxide–semiconductor device by Schottky scanning capacitance microscopy
1998 ◽
Vol 16
(2)
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pp. 873-875
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2004 ◽
Vol 22
(1)
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pp. 364
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2009 ◽
Vol 48
(1)
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pp. 011203
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2008 ◽
Vol 145-146
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pp. 176-186
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2012 ◽
Vol 51
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pp. 101203
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