Analysis of the two-dimensional-dopant profile in a 90 nm complementary metal–oxide–semiconductor technology using scanning spreading resistance microscopy
2004 ◽
Vol 22
(1)
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pp. 364
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2015 ◽
Vol 64
(2)
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pp. 596-602
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1998 ◽
Vol 16
(1)
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pp. 430
2013 ◽
Vol 7
(4)
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pp. 204-210
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2005 ◽
Vol 44
(No. 40)
◽
pp. L1248-L1251
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