Electrical properties of Ta-doped SnO2 thin films prepared by the metal–organic chemical-vapor deposition method

2001 ◽  
Vol 78 (3) ◽  
pp. 350-352 ◽  
Author(s):  
Sang woo Lee ◽  
Young-Woon Kim ◽  
Haydn Chen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Metal Organic ◽  
Sno2 Thin Films ◽  
Organic Chemical Vapor Deposition

Preparation of semiconductive SrTiO3 thin films by metal-organic chemical vapor deposition and their electrical properties

1997 ◽  
Vol 12 (6) ◽  
pp. 1655-1660 ◽  
Author(s):  
Daisuk Nagano ◽  
Hiroshi Funakubo ◽  
Osamu Sakurai ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Heating Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Treatment Conditions ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Insulating epitaxially grown SrTiO3 thin films were prepared on (100)MgO substrates by metal-organic chemical vapor deposition (MOCVD). Semiconductive SrTiO3 thin films were obtained by the rapid cooling after reheating in reduction atmosphere. The microstructure, crystal structure, and electrical properties of these films were investigated. The electrical properties varied by the composition of films and heat-treatment conditions, i.e., the heating temperature, the oxygen partial pressure, and the cooling rate after the annealing. Change of the resistivity of the film was attributed to that of the carrier concentration. Mobility of films was unchanged, and the value was almost the same order of that of bulks. The lowest resistivity of 0.1 Ω·cm was obtained when a sample of Ti/Sr = 1.0 was heated at 1200 °C under 10−15 Pa of PO2 and then rapidly cooled. This value is similar to that of bulks (100 –10−1 Ω · cm).

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