Electrical resistivity measurements on fragile organic single crystals in the diamond anvil cell

Both constant load creep and recrystallization are investigated using single crystals of 70170 ppb sulfuric-acid-doped and -undoped ice. Both sets of crystals exhibited strains in excess of 200% under tensile creep. The undoped specimens reached these strains roughly twice as fast as the doped specimens. After large local strains were imparted to cuboidal single crystals using equal channel angular extrusion at 2°C and subsequent annealing at the same temperature, recrystallization occurred. It was found that a higher concentration of H2SO4 retarded both recrystallization and the subsequent grain-boundary migration. Direct current electrical resistivity measurements performed on polycrystalline, sulfuric-acid-doped (3 ppm) ice at 10°C showed a much lower resistivity in the grain boundaries than in the lattice. PACS No.: 81.90

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New method of high-pressure Brillouin studies for elastic properties of molecular single-crystals grown in a diamond-anvil cell

10.1063/1.46180 ◽

1994 ◽

Cited By ~ 1

Author(s):

Hiroyasu Shimizu ◽

Shigeo Sasaki

Keyword(s):

High Pressure ◽

Single Crystals ◽

Elastic Properties ◽

Diamond Anvil Cell ◽

New Method ◽

Diamond Anvil

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CRYSTAL GROWTH OF MULTI-LAYERED Ba2Ca4Cu5O10(O,F)2 (F-0245) SUPERCONDUCTOR UNDER HIGH PRESSURE

International Journal of Modern Physics B ◽

10.1142/s0217979205028372 ◽

2005 ◽

Vol 19 (01n03) ◽

pp. 263-266 ◽

Cited By ~ 2

Author(s):

K. TOKIWA ◽

H. OKUMOTO ◽

S. KONO ◽

S. IGA ◽

K. TAKEMURA ◽

...

Keyword(s):

High Pressure ◽

Electrical Resistivity ◽

Crystal Growth ◽

Temperature Dependence ◽

Single Crystals ◽

Cuprate Superconductors ◽

Resistivity Measurements ◽

Starting Mixture

Single crystals of multi-layered Ba 2 Ca 4 Cu 5 O 10( O , F )2 superconductor(F-0245) have been grown under a high pressure of 4.5 GPa . Single crystals with in-plane length of 500μm were typically obtained and flat shiny areas with more than 1 mm 2 were also observed on the surface of fractured samples. Tc values for these samples were determined by electrical resistivity measurements. These values were found to change from 70 K to 85 K by change of oxygen and fluorine contents in the starting mixture. The temperature dependence of resistivity showed characteristic of under-doped cuprate superconductors.

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Structural, optical and high pressure electrical resistivity studies of pure NiO and Cu-doped NiO nanoparticles

International Journal of Modern Physics B ◽

10.1142/s0217979216500569 ◽

2016 ◽

Vol 30 (10) ◽

pp. 1650056 ◽

Cited By ~ 1

Author(s):

M. Abila Marselin ◽

N. Victor Jaya

Keyword(s):

High Pressure ◽

Electrical Resistivity ◽

High Pressures ◽

Precipitation Method ◽

Nio Nanoparticles ◽

Bridgman Anvil ◽

Resistivity Measurements ◽

Diamond Anvil ◽

Set Up ◽

Co Precipitation

In this paper, pure NiO and Cu-doped NiO nanoparticles are prepared by co-precipitation method. The electrical resistivity measurements by applying high pressure on pure NiO and Cu-doped NiO nanoparticles were reported. The Bridgman anvil set up is used to measure high pressures up to 8 GPa. These measurements show that there is no phase transformation in the samples till the high pressure is reached. The samples show a rapid decrease in electrical resistivity up to 5 GPa and it remains constant beyond 5 GPa. The electrical resistivity and the transport activation energy of the samples under high pressure up to 8 GPa have been studied in the temperature range of 273–433 K using diamond anvil cell. The temperature versus electrical resistivity studies reveal that the samples behave like a semiconductor. The activation energies of the charge carriers depend on the size of the samples.

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Electrical resistivity of a novel oxadiazole derivative as a function of pressure and temperature using a diamond anvil cell

Chinese Physics ◽

10.1088/1009-1963/14/6/028 ◽

2005 ◽

Vol 14 (6) ◽

pp. 1223-1226 ◽

Cited By ~ 2

Author(s):

Luo Ji-Feng ◽

Han Yong-Hao ◽

Tang Ben-Chen ◽

Gao Chun-Xiao ◽

Li Min ◽

...

Keyword(s):

Electrical Resistivity ◽

Diamond Anvil Cell ◽

Diamond Anvil

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Electrical resistivity of gallium single crystals at low temperatures

Proceedings of the Royal Society of London Series A - Mathematical and Physical Sciences ◽

10.1098/rspa.1951.0224 ◽

1951 ◽

Vol 209 (1099) ◽

pp. 542-550 ◽

Cited By ~ 19

Keyword(s):

Electrical Resistivity ◽

Specific Heat ◽

Single Crystals ◽

Low Temperatures ◽

Room Temperature ◽

Resistivity Measurements ◽

Characteristic Temperatures ◽

The Ideal

Electrical resistivity measurements on single crystals of gallium grown to conform approximately to the three axial directions have been extended to low temperatures, detailed investigation being made over the range 20.4 to 4.2° K. The anisotropy of this property increases in this region where the resistivity ratios for the three specimens are approximately 1: 2.1: 8 compared with 1: 2.1 6 : 6.5 5 at room temperature. The ‘ideal’ resistivity is proportional to T n , where n ≃ 4.45 for the range 5 to 12° K and decreases to about 3.9 for the range 12 to 20.4° K. The characteristic temperatures as derived from Grüneisen’s expression show relatively small differences for the three axial directions but decrease with decrease in temperature. Comparable variations with temperature are observed in the characteristic temperatures derived previously from specific heat measurements on gallium.

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