Electrical resistivity of gallium single crystals at low temperatures

1951 ◽  
Vol 209 (1099) ◽  
pp. 542-550 ◽  
Keyword(s):  
Electrical Resistivity ◽  
Specific Heat ◽  
Single Crystals ◽  
Low Temperatures ◽  
Room Temperature ◽  
Resistivity Measurements ◽  
Characteristic Temperatures ◽  
The Ideal

Electrical resistivity measurements on single crystals of gallium grown to conform approximately to the three axial directions have been extended to low temperatures, detailed investigation being made over the range 20.4 to 4.2° K. The anisotropy of this property increases in this region where the resistivity ratios for the three specimens are approximately 1: 2.1: 8 compared with 1: 2.1 6 : 6.5 5 at room temperature. The ‘ideal’ resistivity is proportional to T n , where n ≃ 4.45 for the range 5 to 12° K and decreases to about 3.9 for the range 12 to 20.4° K. The characteristic temperatures as derived from Grüneisen’s expression show relatively small differences for the three axial directions but decrease with decrease in temperature. Comparable variations with temperature are observed in the characteristic temperatures derived previously from specific heat measurements on gallium.

PHONON-DRAG EFFECT OF ULTRA-THIN FeSi2 AND MnSi1.7/FeSi2 FILMS

2011 ◽  
Vol 25 (22) ◽  
pp. 1829-1838 ◽  
Author(s):  
Q. R. HOU ◽  
B. F. GU ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Single Crystals ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Low Temperatures ◽  
Room Temperature ◽  
Phonon Drag ◽  
Drag Effect ◽  
Thermoelectric Power Factor

Phonon-drag effect usually occurs in single crystals at very low temperatures (10–200 K). Strong phonon-drag effect is observed in ultra-thin β- FeSi 2 films at around room temperature. The Seebeck coefficient of a 23 nm-thick β- FeSi 2 film can reach -1.375 mV/K at 343 K. However, the thermoelectric power factor of the film is still small, only 0.42×10-3 W/m-K2, due to its large electrical resistivity. When a 27 nm-thick MnSi 1.7 film with low electrical resistivity is grown on it, the thermoelectric power factor of the MnSi 1.7 film can reach 1.5×10-3 W/m-K2 at around room temperature. This value is larger than that of bulk MnSi 1.7 material in the same temperature range.

Electrical resistivity measurements in palladium–hydrogen alloys

1968 ◽  
Vol 46 (18) ◽  
pp. 2065-2071 ◽  
Author(s):  
C. T. Haywood ◽  
L. Verdini
Keyword(s):  
Electrical Resistivity ◽  
Transition Metals ◽  
Low Temperatures ◽  
Room Temperature ◽  
Residual Resistivity ◽  
Resistivity Measurements ◽  
Order Of Magnitude ◽  
Rate Of Cooling ◽  
High Concentrations ◽  
Pure Palladium

The resistivity of palladium and palladium–hydrogen alloys has been studied in the temperature range 2–300 °K. At low temperatures (10 °K < T < 60 °K), it is found that ρ1 is proportional to Tn with n = 3.1 for pure palladium; but n decreases to 2.3 for an alloy with H/Pd = 0.25. For high concentrations and at low temperatures, the resistivity is found to be dependent upon the time and rate of cooling through the [Formula: see text] transformation. The residual resistivity is lower for faster cooling rates.The increase in resistivity due to 1 at. % hydrogen in palladium is calculated and found to be of the same order of magnitude as that for interstitials in other f.c.c. metals, but less then that found for hydrogen in the b.c.c. transition metals tantalum and niobium at room temperature.

The electrical resistivity of lithium-6

1961 ◽  
Vol 263 (1314) ◽  
pp. 407-419 ◽  
Keyword(s):  
Electrical Resistivity ◽  
Isotopic Composition ◽  
Specific Heat ◽  
Room Temperature ◽  
Natural Isotopic Composition ◽  
Square Roots ◽  
Conduction Electrons ◽  
Ionic Mass ◽  
Theoretical Predictions ◽  
Electrical Resistivities

The electrical resistivities of lithium -6 and lithium of natural isotopic composition have been studied between 4°K and room temperature. In addition, their absolute resistivities have been carefully compared at room temperature. These measurements show that the effect of ionic mass on electrical resistivity agrees with simple theoretical predictions, namely, that the properties of the conduction electrons in lithium do not depend on the mass of the ions, and that the characteristic lattice frequencies for the two pure isotopes are in the inverse ratio of the square roots of their ionic masses. A comparison with the specific heat results of Martin (1959, 1960), where the simple theory is found not to hold, indicates the possibility that anharmonic effects are present which affect the specific heat but not the electrical resistivity.

Evolution of crystal structure of dual layered molecular conductor (ET)4ZnBr4(C6H4Cl2) with temperature

CrystEngComm ◽  
2021 ◽  
Author(s):  
Gennady V. Shilov ◽  
Elena I. Zhilyaeva ◽  
Sergey M. Aldoshin ◽  
Alexandra M Flakina ◽  
Rustem B. Lyubovskii ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electrical Resistivity ◽  
Single Crystal ◽  
Room Temperature ◽  
Organic Conductor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Resistivity Measurements ◽  
Molecular Conductor ◽  
Abrupt Changes

Electrical resistivity measurements of a dual layered organic conductor (ET)4ZnBr4(1,2-C6H4Cl2) above room temperature show abrupt changes in resistivity at 320 K. Single-crystal X-ray diffraction studies in the 100-350 K range...

The effects of sulfuric acid on the creep, recrystallization, and electrical properties of ice

2003 ◽  
Vol 81 (1-2) ◽  
pp. 395-400 ◽  
Author(s):  
D Iliescu ◽  
I Baker ◽  
X Li
Keyword(s):  
Electrical Resistivity ◽  
Sulfuric Acid ◽  
Single Crystals ◽  
Equal Channel Angular Extrusion ◽  
Boundary Migration ◽  
Constant Load ◽  
Tensile Creep ◽  
Grain Boundary Migration ◽  
Resistivity Measurements ◽  
Lower Resistivity

Both constant load creep and recrystallization are investigated using single crystals of 70–170 ppb sulfuric-acid-doped and -undoped ice. Both sets of crystals exhibited strains in excess of 200% under tensile creep. The undoped specimens reached these strains roughly twice as fast as the doped specimens. After large local strains were imparted to cuboidal single crystals using equal channel angular extrusion at –2°C and subsequent annealing at the same temperature, recrystallization occurred. It was found that a higher concentration of H2SO4 retarded both recrystallization and the subsequent grain-boundary migration. Direct current electrical resistivity measurements performed on polycrystalline, sulfuric-acid-doped (3 ppm) ice at –10°C showed a much lower resistivity in the grain boundaries than in the lattice. PACS No.: 81.90

Effect of high pressure on various diffusion mechanisms in oxygen-deficient ReBa2Cu3O7−x (Re = Y, Ho) single crystals

2019 ◽  
Vol 33 (04) ◽  
pp. 1950039
Author(s):  
G. Ya. Khadzhai ◽  
N. R. Vovk ◽  
R. V. Vovk ◽  
I. L. Goulatis ◽  
O. V. Dobrovolskiy
Keyword(s):  
High Pressure ◽  
Electrical Resistivity ◽  
Hydrostatic Pressure ◽  
Single Crystals ◽  
High Hydrostatic Pressure ◽  
Room Temperature ◽  
Diffusion Mechanisms ◽  
Diffusion Coalescence

The effect of high hydrostatic pressure on the relaxation of the electrical resistivity at room temperature of oxygen-nonstoichiometric [Formula: see text] (Re = Y, Ho) single crystals is investigated. The application of hydrostatic pressure has been revealed to significantly intensify the process of diffusion coalescence in the oxygen subsystem. At the same time, the intensity of the redistribution of labile oxygen is significantly changed when yttrium is replaced by holmium.

CRYSTAL GROWTH OF MULTI-LAYERED Ba2Ca4Cu5O10(O,F)2 (F-0245) SUPERCONDUCTOR UNDER HIGH PRESSURE

2005 ◽  
Vol 19 (01n03) ◽  
pp. 263-266 ◽  
Author(s):  
K. TOKIWA ◽  
H. OKUMOTO ◽  
S. KONO ◽  
S. IGA ◽  
K. TAKEMURA ◽  
...  
Keyword(s):  
High Pressure ◽  
Electrical Resistivity ◽  
Crystal Growth ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Cuprate Superconductors ◽  
Resistivity Measurements ◽  
Starting Mixture

Single crystals of multi-layered Ba 2 Ca 4 Cu 5 O 10( O , F )2 superconductor(F-0245) have been grown under a high pressure of 4.5 GPa . Single crystals with in-plane length of 500μm were typically obtained and flat shiny areas with more than 1 mm 2 were also observed on the surface of fractured samples. Tc values for these samples were determined by electrical resistivity measurements. These values were found to change from 70 K to 85 K by change of oxygen and fluorine contents in the starting mixture. The temperature dependence of resistivity showed characteristic of under-doped cuprate superconductors.

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