Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH3 and SiF4

2001 ◽  
Vol 90 (4) ◽  
pp. 1955-1961 ◽  
Author(s):  
Hiroyuki Ohta ◽  
Masaru Hori ◽  
Toshio Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Dielectric Films ◽  
Remote Plasma

Quasi-Stoichiometric Silicon Nitride Thin Films Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition

1992 ◽  
Vol 284 ◽  
Author(s):  
G. Lucovsky ◽  
Y. Ma ◽  
S. S. He ◽  
T. Yasuda ◽  
D. J. Stephens ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Electrical Performance ◽  
Remote Plasma ◽  
Silicon Nitride Films ◽  
On Line

ABSTRACTConditions for depositing quasi-stoichiometric silicon nitride films by low-temperature, remote plasma-enhanced chemical-vapor deposition, RPECVD, have been identified using on-line Auger electron spectroscopy, AES, and off-line optical and infrared, IR, spectroscopies. Quasi-stoichiometric films, by the definition propose in this paper, do not display spectroscopic evidence for Si-Si bonds, but contain bonded-H in Si-H and Si-NH arrangements. Incorporation of RPECVD nitrides into transistor devices has demonstrated that electrical performance is optimized when the films are quasi-stoichiometric with relatively low Si-NH concentrations.

Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride from Tetra-Silane and Hydrogen Azide

1992 ◽  
Vol 284 ◽  
Author(s):  
Ryoichi Ishihara ◽  
Hiroshi Kanoh ◽  
Yasutaka Uchida ◽  
Osamu Sugiura ◽  
Masakiyo Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Atomic Ratio ◽  
Breakdown Field ◽  
Silicon Thin Film ◽  
Silicon Nitride Films ◽  
Low Field

ABSTRACTSilicon nitride films have been successfully deposited at a temperature as low as 300°C by chemical-vapor-deposition using tctra-silane (Si4 H10) and hydrogen azidc (HN3). Atomic ratio (N/Si) of the film deposited at 400°C was 1.47, i.e., the film was N-rich. Total hydrogen content was about 25atomic%. The breakdown-field strength was 6.5MV/cm at leakage-current density of 1μA/cm2, and the low-field resistivity was more than 1015 Ωcm. Similar electrical characteristics were obtained from films deposited at a temperature range between 300°C and 500°C. Amorphous silicon thin-film transistors equipped with this film as the gate dielectric showed good transfer characteristics.

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