Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal–oxide–semiconductor field-effect transistors: Effective electron mobility
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2007 ◽
Vol 46
(4B)
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pp. 2117-2121
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2013 ◽
Vol 12
(4)
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pp. 621-628
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2011 ◽
Vol 50
(9R)
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pp. 094101
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