Room-temperature ferromagnetism in zincblende CrSb grown by molecular-beam epitaxy

In this paper, α- Mn 2 O 3 thin films were fabricated by plasma-assisted molecular beam epitaxy on SrTiO 3 and Nb : SrTiO 3, respectively. The grown samples showed room temperature ferromagnetism (RFM) properties. All the experimental results manifested that the RFM properties in undoped thin films were induced by oxygen vacancies formed during the growth process. Even more, the ferromagnetism of thin films grown on Nb : SrTiO 3 were enhanced, and these results confirmed the fact that oxygen vacancies induced ferromagnetism. That is to say, more oxygen vacancies result the more unpaired electrons induced prominent abnormal spin causing ferromagnetism.

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Room temperature ferromagnetism in CrGaN: Dependence on growth conditions in rf N-plasma molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2005.08.047 ◽

2005 ◽

Vol 285 (3) ◽

pp. 300-311 ◽

Cited By ~ 8

Author(s):

Muhammad B. Haider ◽

Rong Yang ◽

Hamad Al-Brithen ◽

Costel Constantin ◽

David C. Ingram ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Room Temperature ◽

Molecular Beam ◽

Room Temperature Ferromagnetism ◽

Growth Conditions

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Room temperature ferromagnetism in (Ga1−xMnx)2O3 epitaxial thin films

Journal of Materials Chemistry C ◽

10.1039/c4tc02833c ◽

2015 ◽

Vol 3 (8) ◽

pp. 1830-1834 ◽

Cited By ~ 45

Author(s):

Daoyou Guo ◽

Zhenping Wu ◽

Yuehua An ◽

Xiaojiang Li ◽

Xuncai Guo ◽

...

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Room Temperature ◽

Molecular Beam ◽

Room Temperature Ferromagnetism ◽

Epitaxial Thin Films ◽

Laser Molecular Beam Epitaxy ◽

Mn Doped

Mn-doped monoclinic β-(Ga1−xMnx)2O3 thin films were epitaxially grown on α-Al2O3 (0001) substrates by alternately depositing Ga2O3 and Mn layers using the laser molecular beam epitaxy technique.

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Visible photoluminescence and room temperature ferromagnetism in high In-content InGaN:Yb nanorods grown by molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.4931576 ◽

2015 ◽

Vol 118 (12) ◽

pp. 125707 ◽

Cited By ~ 7

Author(s):

K. Dasari ◽

J. Wang ◽

M. J.-F. Guinel ◽

W. M. Jadwisienczak ◽

H. Huhtinen ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Room Temperature ◽

Molecular Beam ◽

Room Temperature Ferromagnetism ◽

Visible Photoluminescence

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Room-Temperature Wafer Bonded Multi-Junction Solar Cell Grown by Solid State Molecular Beam Epitaxy

MRS Advances ◽

10.1557/adv.2016.429 ◽

2016 ◽

Vol 1 (43) ◽

pp. 2907-2916 ◽

Cited By ~ 3

Author(s):

Shulong Lu ◽

Shiro Uchida

Keyword(s):

Solar Cell ◽

Molecular Beam Epitaxy ◽

Wafer Bonding ◽

Room Temperature ◽

Molecular Beam ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Device Structure ◽

Junction Solar Cell

ABSTRACTWe studied the InGaP/GaAs//InGaAsP/InGaAs four-junction solar cells grown by molecular beam epitaxy (MBE), which were fabricated by the novel wafer bonding. In order to reach a higher conversion efficiency at highly concentrated illumination, heat generation should be minimized. We have improved the device structure to reduce the thermal and electrical resistances. Especially, the bond resistance was reduced to be the lowest value of 2.5 × 10-5 Ohm cm2 ever reported for a GaAs/InP wafer bond, which was obtained by the specific combination of p+-GaAs/n-InP bonding and by using room-temperature wafer bonding. Furthermore, in order to increase the short circuit current density (Jsc) of 4-junction solar cell, we have developed the quality of InGaAsP material by increasing the growth temperature from 490 °C to 510 °C, which leads to a current matching. In a result, an efficiency of 42 % at 230 suns of the four-junction solar cell fabricated by room-temperature wafer bonding was achieved.

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Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)

MRS Proceedings ◽

10.1557/proc-595-f99w11.65 ◽

1999 ◽

Vol 595 ◽

Cited By ~ 1

Author(s):

U. Hömmerich ◽

J. T. Seo ◽

J. D. MacKenzie ◽

C. R. Abernathy ◽

R. Birkhahn ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Excited States ◽

Room Temperature ◽

Molecular Beam ◽

Average Lifetime ◽

Green Luminescence ◽

Si Substrates ◽

Lifetime Analysis ◽

Metalorganic Molecular Beam Epitaxy ◽

Er Doped

AbstractWe report on the luminescence properties of Er doped GaN grown prepared by metalorganic molecular beam epitaxy (MOMBE) and solid-source molecular beam epitaxy (SSMBE) on Si substrates. Both types of samples emitted characteristic 1.54 µm PL resulting from the intra-4f Er3+ transition 4I13/2→4I15/2. Under below-gap excitation the samples exhibited very similar 1.54 µm PL intensities. On the contrary, under above-gap excitation GaN: Er (SSMBE) showed ∼80 times more intense 1.54 µm PL than GaN: Er (MOMBE). In addition, GaN: Er (SSMBE) also emitted intense green luminescence at 537 nm and 558 nm, which was not observed from GaN: Er (MOMBE). The average lifetime of the green PL was determined to be 10.8 µs at 15 K and 5.5 µs at room temperature. A preliminary lifetime analysis suggests that the decrease in lifetime is mainly due to the strong thermalization between the 2H11/2 and 4S3/2 excited states. Nonradiative decay processes are expected to only weakly affect the green luminescence.

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