Light-controllable room temperature negative differential resistance in deep-trench type nitride–oxide tunneling device and its applications

2002 ◽  
Vol 80 (18) ◽  
pp. 3271-3273 ◽  
Author(s):  
Fen Chen ◽  
Baozhen Li ◽  
Kai D Feng
Keyword(s):  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance ◽  
Deep Trench ◽  
Nitride Oxide

Tunable Negative Differential Resistance in van der Waals Heterostructures at Room Temperature by Tailoring the Interface

ACS Nano ◽  
2019 ◽  
Vol 13 (7) ◽  
pp. 8193-8201 ◽  
Author(s):  
Sidi Fan ◽  
Quoc An Vu ◽  
Sanghyub Lee ◽  
Thanh Luan Phan ◽  
Gyeongtak Han ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Room Temperature ◽  
Van Der Waals ◽  
Differential Resistance ◽  
Van Der Waals Heterostructures

Room temperature negative differential resistance in molecular nanowires

2002 ◽  
Vol 12 (10) ◽  
pp. 2927-2930 ◽  
Author(s):  
Irena Kratochvilova ◽  
Milan Kocirik ◽  
Adriana Zambova ◽  
Jeremiah Mbindyo ◽  
Thomas E. Mallouk ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance

scholarly journals Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD

2002 ◽  
Vol 25 (3) ◽  
pp. 245-248
Author(s):  
K. F. Yarn
Keyword(s):  
Schottky Diode ◽  
Negative Differential Resistance ◽  
Room Temperature ◽  
Thermionic Emission ◽  
Differential Resistance ◽  
Tunneling Effect ◽  
Peak Current Density ◽  
Interband Tunneling ◽  
First Time ◽  
Peak To Valley Ratio

An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of1KA/cm2were achieved at room temperature. In addition, the maximum available power is estimated up to5W/cm2. The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.

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