Influence of the quantum-well shape on the light emission characteristics of InGaN/GaN quantum-well structures and light-emitting diodes

2002 ◽  
Vol 81 (19) ◽  
pp. 3552-3554 ◽  
Author(s):  
H. W. Shim ◽  
R. J. Choi ◽  
S. M. Jeong ◽  
Le Van Vinh ◽  
C.-H. Hong ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Emission Characteristics ◽  
Light Emitting ◽  
Quantum Well Structures

Comparison of light emission in InGaN/GaN light-emitting diodes with graded, triangular, and parabolic quantum-well structures

2012 ◽  
Vol 60 (3) ◽  
pp. 505-508 ◽  
Author(s):  
Seoung-Hwan Park ◽  
Yong-Tae Moon ◽  
Dae-Seob Han ◽  
Joong Seo Park ◽  
Myeong-Seok Oh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Light Emitting ◽  
Quantum Well Structures

Light Emission Characteristics and Mechanics of Foldable Inorganic Light-Emitting Diodes

2010 ◽  
Vol 22 (28) ◽  
pp. 3062-3066 ◽  
Author(s):  
Sang-Il Park ◽  
An-Phong Le ◽  
Jian Wu ◽  
Yonggang Huang ◽  
Xiuling Li ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emission ◽  
Emission Characteristics ◽  
Light Emitting

Emission characteristics of InGaN multi quantum well light emitting diodes with differently strained InAlGaN barriers

2009 ◽  
Vol 6 (S2) ◽  
pp. S889-S892 ◽  
Author(s):  
T. Kolbe ◽  
A. Knauer ◽  
H. Wenzel ◽  
S. Einfeldt ◽  
V. Kueller ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Emission Characteristics ◽  
Light Emitting ◽  
Multi Quantum Well

Optical Performance Characteristics of Light-Emitting Diodes Designed with Dip-Shaped InGaN/GaN Quantum well Structures

2013 ◽  
Vol 328 ◽  
pp. 845-849
Author(s):  
Seong Jun Kim ◽  
Chel Jong Choi ◽  
Hyun Soo Kim
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Spatial Separation ◽  
Wave Functions ◽  
Radiative Recombination Rate ◽  
Electron Hole ◽  
Light Emitting ◽  
Quantum Well Structures ◽  
Lower Temperature

A dip-shaped InGaN/GaN quantum well (QW) structure was computed to design efficient light-emitting diodes (LEDs). The advanced LEDs designed with the dip-shaped QW structures exhibited higher internal quantum efficiency by 26 % and the lower temperature-driven efficiency droop as compared to the reference LEDs. This could be due to the enhanced radiative recombination rate in the QW active region, which is associated with the reduced spatial separation of electron-hole wave functions.

Full-color light-emitting diodes from ZnCdMgSe/ZnCdSe quantum well structures grown on InP substrates

2000 ◽  
Vol 214-215 ◽  
pp. 1058-1063 ◽  
Author(s):  
M.C Tamargo ◽  
W Lin ◽  
S.P Guo ◽  
Y Guo ◽  
Y Luo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Quantum Well Structures ◽  
Full Color ◽  
Inp Substrates
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