scholarly journals Electrical properties of calcia-stabilised zirconia ceramics: voltage-induced p-type conductivity and oxygen redox activity

Open Ceramics ◽  
2021 ◽  
pp. 100117
Author(s):  
Julia Ramírez-González ◽  
Anthony R. West
Keyword(s):  
Electrical Properties ◽  
Redox Activity ◽  
Zirconia Ceramics ◽  
Type Conductivity ◽  
P Type

The effect of sulfur on the electrical properties of S and N co-doped ZnO thin films: experiment and first-principles calculations

2015 ◽  
Vol 17 (26) ◽  
pp. 16705-16708 ◽  
Author(s):  
Wenzhe Niu ◽  
Hongbin Xu ◽  
Yanmin Guo ◽  
Yaguang Li ◽  
Zhizhen Ye ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
First Principles ◽  
Zno Thin Films ◽  
First Principles Calculations ◽  
Type Conductivity ◽  
Doped Zno ◽  
P Type ◽  
Co Doped

The S dopants in S–N co-doped ZnO contribute to easier doping and p-type conductivity, as concluded by experiment and calculations.

Room temperature sputtered Cu doped NiO1+δ: p-type conductivity, stability of electrical properties and p-n heterojunction

2020 ◽  
Vol 835 ◽  
pp. 155269
Author(s):  
Kingsley O. Egbo ◽  
Mengqin Kong ◽  
Chao Ping Liu ◽  
Kin Man Yu
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Type Conductivity ◽  
P Type

scholarly journals Electrical Properties of Cubic InN And GaN Epitaxial Layers as a Function of Temperature

2000 ◽  
Vol 5 (S1) ◽  
pp. 216-222
Author(s):  
J.R.L. Fernandez ◽  
V.A. Chitta ◽  
E. Abramof ◽  
A. Ferreira da Silva ◽  
J.R. Leite ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Doping Level ◽  
Type Conductivity ◽  
Si Doping ◽  
Donor And Acceptor ◽  
Cubic Gan ◽  
Si Doped ◽  
P Type

Carrier concentration and mobility were measured for intrinsic cubic InN and GaN, and for Si-doped cubic GaN as a function of temperature. Metallic n-type conductivity was found for the InN, while background p-type conductivity was observed for the intrinsic GaN layer. Doping the cubic GaN with Si two regimes were observed. For low Si-doping concentrations, the samples remain p-type. Increasing the Si-doping level, the background acceptors are compensated and the samples became highly degenerated n-type. From the carrier concentration dependence on temperature, the activation energy of the donor and acceptor levels was determined. Attempts were made to determine the scattering mechanisms responsible for the behavior of the mobility as a function of temperature.

Electronic doping-enabled transition from n- to p-type conductivity over Au@CdS core–shell nanocrystals toward unassisted photoelectrochemical water splitting

2019 ◽  
Vol 7 (40) ◽  
pp. 23038-23045 ◽  
Author(s):  
Rongrong Pan ◽  
Jia Liu ◽  
Yuemei Li ◽  
Xinyuan Li ◽  
Erhuan Zhang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Cation Exchange ◽  
Water Splitting ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Type Conductivity ◽  
Hybrid Nanocrystals ◽  
Novel Strategy ◽  
Electronic Doping ◽  
P Type

Here we show a novel strategy for tailoring the synergistic electrical properties of metal@semiconductor hybrid nanocrystals (HNCs) based on cation exchange-enabled electronic doping.

scholarly journals Electrical properties and charge compensation mechanisms of Cr-doped rutile, TiO2

2021 ◽  
Author(s):  
Yun Dang ◽  
Xin Li Phuah ◽  
Han Wang ◽  
Bo Yang ◽  
Haiyan Wang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Oxygen Vacancy ◽  
Electronic Conductivity ◽  
Charge Compensation ◽  
Rutile Tio2 ◽  
Type Conductivity ◽  
Co Doping ◽  
High Electronic Conductivity ◽  
Compensation Mechanisms ◽  
P Type

Ti1−xCrxO2−x/2−δ (0 ≤ x ≤ 0.05) ceramics show high electronic conductivity at low x attributed to oxygen vacancy compensation by co-doping with Ti3+ and Cr3+ ions. At intermediate x, p-type conductivity is attributed to hole location on under-bonded oxygen.

scholarly journals Electrical properties of CdTe thin layers

2019 ◽  
Vol 20 (4) ◽  
pp. 372-375
Author(s):  
V.V. Prokopiv ◽  
O.B. Kostyuk ◽  
B.S. Dzundza ◽  
T.M. Mazur ◽  
L.V. Turovska ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Thin Layers ◽  
Chemical Doping ◽  
Type Conductivity ◽  
Technological Factors ◽  
Layer Velocity ◽  
P Type

The technique of obtaining thin layers of cadmium telluride of p-type conductivity by chemical doping of the surface of cadmium telluride crystals by calcium is described. The dependences of the electrical properties of the obtained films on the technological factors of their production are investigated. The conductivity of the doped layer, velocity and depth of diffusion are determined.

Electrical Properties of Cubic InN and GaN Epitaxial Layers as a Function of Temperature

1999 ◽  
Vol 595 ◽  
Author(s):  
J.R.L. Fernandez ◽  
V.A. Chitta ◽  
E. Abramof ◽  
A. Ferreira da Silva ◽  
J.R. Leite ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Doping Level ◽  
Type Conductivity ◽  
Si Doping ◽  
Donor And Acceptor ◽  
Cubic Gan ◽  
Si Doped ◽  
P Type

AbstractCarrier concentration and mobility were measured for intrinsic cubic InN and GaN, and for Si-doped cubic GaN as a function of temperature. Metallic n-type conductivity was found for the InN, while background p-type conductivity was observed for the intrinsic GaN layer. Doping the cubic GaN with Si two regimes were observed. For low Si-doping concentrations, the samples remain p-type. Increasing the Si-doping level, the background acceptors are compensated and the samples became highly degenerated n-type. From the carrier concentration dependence on temperature, the activation energy of the donor and acceptor levels was determined. Attempts were made to determine the scattering mechanisms responsible for the behavior of the mobility as a function of temperature.

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

2004 ◽  
Vol 33 (5) ◽  
pp. 460-466 ◽  
Author(s):  
S. Tsukimoto ◽  
K. Nitta ◽  
T. Sakai ◽  
M. Moriyama ◽  
Masanori Murakami
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
P Type
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