Growth and characterization of Hf–aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 Å

2003 ◽  
Vol 93 (6) ◽  
pp. 3665-3667 ◽  
Author(s):  
P. F. Lee ◽  
J. Y. Dai ◽  
K. H. Wong ◽  
H. L. W. Chan ◽  
C. L. Choy
Keyword(s):  
Ultrathin Films ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
High K ◽  
High K Gate Dielectric

A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric

2011 ◽  
Vol 88 (7) ◽  
pp. 1309-1311 ◽  
Author(s):  
C.H. Fu ◽  
K.S. Chang-Liao ◽  
Y.A. Chang ◽  
Y.Y. Hsu ◽  
T.H. Tzeng ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Gate Leakage Current ◽  
Equivalent Oxide Thickness ◽  
Gate Leakage ◽  
High K ◽  
High K Gate Dielectric

Characterization of high-k gate dielectric/silicon interfaces

2002 ◽  
Vol 190 (1-4) ◽  
pp. 66-74 ◽  
Author(s):  
Seiichi Miyazaki
Keyword(s):  
Gate Dielectric ◽  
High K ◽  
High K Gate Dielectric

Characterization of high-k gate dielectric films using SIMS

2003 ◽  
Vol 203-204 ◽  
pp. 516-519 ◽  
Author(s):  
T. Yamamoto ◽  
N. Morita ◽  
N. Sugiyama ◽  
A. Karen ◽  
K. Okuno
Keyword(s):  
Gate Dielectric ◽  
Dielectric Films ◽  
High K ◽  
High K Gate Dielectric

Electrical Characteristics of TaOxNy for High-k MOS Gate Dielectric Applications

2000 ◽  
Vol 611 ◽  
Author(s):  
Kiju Im ◽  
Hyungsuk Jung ◽  
Sanghun Jeon ◽  
Dooyoung Yang ◽  
Hyunsang Hwang
Keyword(s):  
Electron Spectroscopy ◽  
Gate Dielectric ◽  
Tantalum Oxide ◽  
Charge Trapping ◽  
Oxide Thickness ◽  
Electrical Characteristics ◽  
Equivalent Oxide Thickness ◽  
Ammonia Treatment ◽  
High K ◽  
Mos Gate

ABSTRACTIn this paper, we report a process for the preparation of high quality amorphous tantalum oxynitride (TaOxNy) via ammonia annealing of Ta2O5 followed by wet reoxidation for use in gate dielectric applications. Compared with tantalum oxide(Ta2O5), a significant improvement in the dielectric constant was obtained by the ammonia treatment followed by light reoxidation in a wet ambient. We confirmed nitrogen incorporation in the tantalum oxynitride (TaOxNy) by Auger Electron Spectroscopy. By optimizing the nitridation and reoxidation process, we obtained an equivalent oxide thickness of less than 1.6nm and a leakage current of less than 10mA/cm2 at -1.5V. Compared with NH3 nitridation, nitridation of Ta2O5 in ND3 improve charge trapping and charge-to-breakdown characteristics of tantalum oxynitride.

Observation and characterization of defects in HfO2 high-K gate dielectric layers

2005 ◽  
Vol 45 (5-6) ◽  
pp. 798-801 ◽  
Author(s):  
Vidya Kaushik ◽  
Martine Claes ◽  
Annelies Delabie ◽  
Sven Van Elshocht ◽  
Olivier Richard ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Dielectric Layers ◽  
High K ◽  
High K Gate Dielectric

Characterization of ALD Beryllium Oxide as a Potential High-k Gate Dielectric for Low-Leakage AlGaN/GaN MOSHEMTs

2013 ◽  
Vol 43 (1) ◽  
pp. 151-154 ◽  
Author(s):  
Derek W. Johnson ◽  
Jung Hwan Yum ◽  
Todd W. Hudnall ◽  
Ryan M. Mushinski ◽  
Christopher W. Bielawski ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Beryllium Oxide ◽  
Low Leakage ◽  
High K ◽  
High K Gate Dielectric
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