scholarly journals Comparison of radiative and structural properties of 1.3 μm InxGa(1−x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties

2003 ◽  
Vol 82 (21) ◽  
pp. 3632-3634 ◽  
Author(s):  
A. Passaseo ◽  
M. De Vittorio ◽  
M. T. Todaro ◽  
I. Tarantini ◽  
M. De Giorgi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Structural Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Quantum Dot Laser ◽  
Metalorganic Chemical

1.24 μm InGaAs/GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine

2004 ◽  
Vol 84 (16) ◽  
pp. 2992-2994 ◽  
Author(s):  
I. N. Kaiander ◽  
R. L. Sellin ◽  
T. Kettler ◽  
N. N. Ledentsov ◽  
D. Bimberg ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Dot ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Quantum Dot Laser ◽  
Gaas Quantum Dot ◽  
Metalorganic Chemical

Lateral polarity heterostructures by overgrowth of patterned AlxGa1-xN nucleation layers

2000 ◽  
Vol 622 ◽  
Author(s):  
R. Dimitrov ◽  
V. Tilak ◽  
M. Murphy ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Structural And Electrical Properties ◽  
Metalorganic Chemical

ABSTRACTIn this study thin AlxGa1−xN nucleation layers on sapphire were patterned and overgrown by plasma-induced molecular beam epitaxy (PIMBE) and metalorganic chemical vapor deposition (MOCVD) to obtain adjacent regions of GaN and AlGaN/GaN heterostructures with different polarities. The role of polarity on the structural and electrical properties of epitaxial layers and AlGaN/GaN heterostructures was investigated for samples grown on patterned AlN or GaN nucleation layers. Epitaxial GaN and AlGaN/GaN heterostructures grown on Al-face AlN or N- face GaN nucleation layers were found to be Ga-face or N-face, respectively, independent of the technique used for the overgrowth.

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