Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

1988 ◽  
Vol 52 (24) ◽  
pp. 2028-2030 ◽  
Author(s):  
A. Nouhi ◽  
G. Radhakrishnan ◽  
J. Katz ◽  
K. Koliwad
Keyword(s):  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Si Substrates ◽  
Metalorganic Chemical

Lateral polarity heterostructures by overgrowth of patterned AlxGa1-xN nucleation layers

2000 ◽  
Vol 622 ◽  
Author(s):  
R. Dimitrov ◽  
V. Tilak ◽  
M. Murphy ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Structural And Electrical Properties ◽  
Metalorganic Chemical

ABSTRACTIn this study thin AlxGa1−xN nucleation layers on sapphire were patterned and overgrown by plasma-induced molecular beam epitaxy (PIMBE) and metalorganic chemical vapor deposition (MOCVD) to obtain adjacent regions of GaN and AlGaN/GaN heterostructures with different polarities. The role of polarity on the structural and electrical properties of epitaxial layers and AlGaN/GaN heterostructures was investigated for samples grown on patterned AlN or GaN nucleation layers. Epitaxial GaN and AlGaN/GaN heterostructures grown on Al-face AlN or N- face GaN nucleation layers were found to be Ga-face or N-face, respectively, independent of the technique used for the overgrowth.

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