Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire

Molecular Beam Epitaxy ◽

Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Two Dimensional ◽

Dimensional Electron ◽

Electron Gases ◽

Two‐dimensional electron gases in quantum well and superlattices of Ga0.25In0.75As0.50P0.50/InP heterostructures grown by low pressure metalorganic chemical vapor deposition

10.1063/1.95846 ◽

1985 ◽

Vol 46 (1) ◽

pp. 46-48 ◽

Cited By ~ 23

Author(s):

M. Razeghi ◽

J. P. Duchemin ◽

J. C. Portal

Keyword(s):

Quantum Well ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Two Dimensional ◽

Dimensional Electron ◽

Electron Gases ◽

Strong affinity of hydrogen for the GaN(000-1) surface: Implications for molecular beam epitaxy and metalorganic chemical vapor deposition

10.1063/1.1808227 ◽

2004 ◽

Vol 85 (16) ◽

pp. 3429-3431 ◽

Cited By ~ 64

Author(s):

J. E. Northrup ◽

J. Neugebauer

Keyword(s):

Molecular Beam Epitaxy ◽

Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Strong Affinity ◽

Nitrogen radical densities during GaN growth by molecular beam epitaxy, plasma-assisted metalorganic chemical vapor deposition, and conventional metalorganic chemical vapor deposition

Solid-State Electronics ◽

10.1016/s0038-1101(96)00171-2 ◽

1997 ◽

Vol 41 (2) ◽

pp. 223-226 ◽

Cited By ~ 6

Author(s):

Michio Sato

Keyword(s):

Molecular Beam Epitaxy ◽

Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Nitrogen Radical ◽

Comparison of radiative and structural properties of 1.3 μm InxGa(1−x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties

10.1063/1.1578182 ◽

2003 ◽

Vol 82 (21) ◽

pp. 3632-3634 ◽

Cited By ~ 29

Author(s):

A. Passaseo ◽

M. De Vittorio ◽

M. T. Todaro ◽

I. Tarantini ◽

M. De Giorgi ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Dot ◽

Structural Properties ◽

Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Quantum Dot Laser ◽

Characterization of heavily carbon‐doped GaAs grown by metalorganic chemical vapor deposition and metalorganic molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.351776 ◽

1992 ◽

Vol 72 (3) ◽

pp. 981-987 ◽

Cited By ~ 45

Author(s):

S. A. Stockman ◽

G. E. Höfler ◽

J. N. Baillargeon ◽

K. C. Hsieh ◽

K. Y. Cheng ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Carbon Doped ◽

Metalorganic Molecular Beam Epitaxy ◽

Simple equipment tolerant reflectometry for monitoring of molecular beam epitaxy and metalorganic chemical vapor deposition growth

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580420 ◽

1996 ◽

Vol 14 (3) ◽

pp. 946-951 ◽

Cited By ~ 2

Author(s):

J. C. Bean ◽

L. J. Peticolas ◽

R. Lum ◽

M. L. McDonald

Keyword(s):

Molecular Beam Epitaxy ◽

Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Chemical Vapor Deposition Growth ◽

Two‐dimensional electron gas in a In0.53Ga0.47As‐InP heterojunction grown by metalorganic chemical vapor deposition

10.1063/1.92932 ◽

1982 ◽

Vol 40 (10) ◽

pp. 877-879 ◽

Cited By ~ 96

Author(s):

Y. Guldner ◽

J. P. Vieren ◽

P. Voisin ◽

M. Voos ◽

M. Razeghi ◽

...

Keyword(s):

Vapor Deposition ◽

Electron Gas ◽

Chemical Vapor ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas ◽

Investigation of two-dimensional electron gas in AlGaN/GaN heterostructures grown by metalorganic chemical vapor deposition (MOCVD)

Journal of Crystal Growth ◽

10.1016/s0022-0248(99)00110-4 ◽

1999 ◽

Vol 203 (3) ◽

pp. 443-446 ◽

Cited By ~ 2

Author(s):

T Wang ◽

M Lachab ◽

D Nakagawa ◽

T Shirahama ◽

S Sakai

Keyword(s):

Vapor Deposition ◽

Electron Gas ◽

Chemical Vapor ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas ◽

High Two-Dimensional Electron Mobility in Si Atomic-Layer Doped N-AlGaAs/GaAs Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.l648 ◽

1993 ◽

Vol 32 (Part 2, No. 5A) ◽

pp. L648-L649 ◽

Cited By ~ 1

Author(s):

Toshiki Makimoto ◽

Naoki Kobayashi

Keyword(s):

Vapor Deposition ◽

Electron Mobility ◽

Chemical Vapor ◽

Atomic Layer ◽

Two Dimensional ◽

Dimensional Electron ◽

Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

10.1063/1.99571 ◽

1988 ◽

Vol 52 (24) ◽

pp. 2028-2030 ◽

Cited By ~ 16

Author(s):

A. Nouhi ◽

G. Radhakrishnan ◽

J. Katz ◽

K. Koliwad

Keyword(s):

Molecular Beam Epitaxy ◽

Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Chemical Vapor Deposition Growth ◽

Si Substrates ◽