Characterization of heavily carbon‐doped GaAs grown by metalorganic chemical vapor deposition and metalorganic molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.351776 ◽

1992 ◽

Vol 72 (3) ◽

pp. 981-987 ◽

Author(s):

S. A. Stockman ◽

G. E. Höfler ◽

J. N. Baillargeon ◽

K. C. Hsieh ◽

K. Y. Cheng ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Carbon Doped ◽

Metalorganic Molecular Beam Epitaxy ◽

Metalorganic Chemical

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Use of ultraviolet/ozone cleaning to remove C and O from GaAs prior to metalorganic molecular beam epitaxy and metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.105184 ◽

1991 ◽

Vol 58 (13) ◽

pp. 1416-1418 ◽

Author(s):

S. J. Pearton ◽

F. Ren ◽

C. R. Abernathy ◽

W. S. Hobson ◽

H. S. Luftman

Keyword(s):

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Metalorganic Molecular Beam Epitaxy ◽

Metalorganic Chemical

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Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.3343 ◽

1996 ◽

Vol 35 (Part 1, No. 6A) ◽

pp. 3343-3349 ◽

Author(s):

Hiroshi Ito ◽

Shoji Yamahata ◽

Naoteru Shigekawa ◽

Kenji Kurishima ◽

Yutaka Matsuoka

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Carbon Doped ◽

Metalorganic Chemical

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Strong affinity of hydrogen for the GaN(000-1) surface: Implications for molecular beam epitaxy and metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.1808227 ◽

2004 ◽

Vol 85 (16) ◽

pp. 3429-3431 ◽

Author(s):

J. E. Northrup ◽

J. Neugebauer

Keyword(s):

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Strong Affinity ◽

Metalorganic Chemical

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Nitrogen radical densities during GaN growth by molecular beam epitaxy, plasma-assisted metalorganic chemical vapor deposition, and conventional metalorganic chemical vapor deposition

Solid-State Electronics ◽

10.1016/s0038-1101(96)00171-2 ◽

1997 ◽

Vol 41 (2) ◽

pp. 223-226 ◽

Author(s):

Michio Sato

Keyword(s):

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Nitrogen Radical ◽

Metalorganic Chemical

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Comparison of radiative and structural properties of 1.3 μm InxGa(1−x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties

Applied Physics Letters ◽

10.1063/1.1578182 ◽

2003 ◽

Vol 82 (21) ◽

pp. 3632-3634 ◽

Author(s):

A. Passaseo ◽

M. De Vittorio ◽

M. T. Todaro ◽

I. Tarantini ◽

M. De Giorgi ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Quantum Dot ◽

Structural Properties ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Quantum Dot Laser ◽

Metalorganic Chemical

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Simple equipment tolerant reflectometry for monitoring of molecular beam epitaxy and metalorganic chemical vapor deposition growth

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580420 ◽

1996 ◽

Vol 14 (3) ◽

pp. 946-951 ◽

Author(s):

J. C. Bean ◽

L. J. Peticolas ◽

R. Lum ◽

M. L. McDonald

Keyword(s):

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Chemical Vapor Deposition Growth ◽

Metalorganic Chemical

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Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

Applied Physics Letters ◽

10.1063/1.99571 ◽

1988 ◽

Vol 52 (24) ◽

pp. 2028-2030 ◽

Author(s):

A. Nouhi ◽

G. Radhakrishnan ◽

J. Katz ◽

K. Koliwad

Keyword(s):

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Chemical Vapor Deposition Growth ◽

Si Substrates ◽

Metalorganic Chemical

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Morphology on GaAs surfaces grown by metalorganic chemical vapor deposition and molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90393-x ◽

1994 ◽

Vol 136 (1-4) ◽

pp. 114-117 ◽

Author(s):

Kenji Ikuta ◽

Jiro Osaka ◽

Haruki Yokoyama

Keyword(s):

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Metalorganic Chemical

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Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire

Journal of Applied Physics ◽

10.1063/1.372353 ◽

2000 ◽

Vol 87 (7) ◽

pp. 3375-3380 ◽

Author(s):

R. Dimitrov ◽

M. Murphy ◽

J. Smart ◽

W. Schaff ◽

J. R. Shealy ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Two Dimensional ◽

Dimensional Electron ◽

Electron Gases ◽

Metalorganic Chemical

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Heteroepitaxial InP layers grown by metalorganic chemical vapor deposition on novel GaAs on Si buffers obtained by molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.350814 ◽

1992 ◽

Vol 71 (9) ◽

pp. 4329-4332 ◽

Author(s):

D. J. Olego ◽

M. Tamura ◽

Y. Okuno ◽

T. Kawano ◽

A. Hashimoto

Keyword(s):

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Metalorganic Chemical

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