Experimental Analysis of the Schottky Barrier Layer Model for Reduced Rutile Diodes

1964 ◽  
Vol 35 (7) ◽  
pp. 2142-2144 ◽  
Author(s):  
Richard Bechtel
Keyword(s):  
Schottky Barrier ◽  
Barrier Layer ◽  
Experimental Analysis ◽  
Layer Model

Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers

1998 ◽  
Vol 45 (7) ◽  
pp. 1595-1604 ◽  
Author(s):  
K.P. Schoen ◽  
J.M. Woodall ◽  
J.A. Cooper ◽  
M.R. Melloch
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
Experimental Analysis ◽  
Design Considerations

GaN HEMTs with quaternary In0.05Al0.75Ga0.2N Schottky barrier layer

2016 ◽  
Vol 213 (4) ◽  
pp. 889-892 ◽  
Author(s):  
Ji Hyun Hwang ◽  
Se-Mi Kim ◽  
Jeong Min Woo ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Schottky Barrier ◽  
Barrier Layer ◽  
Gan Hemts

scholarly journals On a layer model for spilling breakers: A preliminary experimental analysis

2019 ◽  
Vol 73 ◽  
pp. 24-47 ◽  
Author(s):  
A. Lucarelli ◽  
C. Lugni ◽  
M. Falchi ◽  
M. Felli ◽  
M. Brocchini
Keyword(s):  
Experimental Analysis ◽  
Layer Model ◽  
Spilling Breakers

Contributions to the theory of heterogeneous barrier layer rectifiers

1951 ◽  
Vol 206 (1087) ◽  
pp. 477-488 ◽  
Keyword(s):  
Schottky Barrier ◽  
Barrier Layer ◽  
Diffusion Theory ◽  
Arbitrary Distribution ◽  
Voltage Curve ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
General Relations ◽  
And Diffusion ◽  
Good Agreement

Assuming an arbitrary distribution of space charge in the barrier layer of a rectifier, the general form of the current-voltage relation has been derived on both diode and diffusion theory. A connexion, valid for most barriers, between this characteristic and the capacitance-voltage curve has been pointed out, and it has been shown that the Sachs breakdown voltage can be deduced from the latter characteristic. The general relations have been applied to a barrier whose distribution of impurity centres is assumed to establish itself by a diffusion process. Its properties have been investigated, and it has been found that the shapes of the experimental d. c. characteristics, considered in a previous paper (Landsberg 1951 b ), are in the same good agreement with the hypothesis of this barrier as they are with the hypothesis of a Schottky barrier. The difficulties regarding the constants of the rectifiers , as obtained from the experimental curves, are, however, greatly alleviated if the present barriers rather than Schottky’s barrier is assumed. It has been shown that both barriers belong to a whole class of barrier layers whose d. c. and capacitance-voltage curves have the same shape as the corresponding curves for a Schottky barrier.

The Influence of AlGaN/GaN Schottky Barrier Diode (SBD) with SiH4 Doping in Barrier Layer

2016 ◽  
Author(s):  
J.W. Chiu ◽  
S.C. Chen ◽  
B.H. Li ◽  
H.C. Chiu ◽  
R. Xuan ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Layer ◽  
Schottky Barrier Diode

Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si–SiO2 interfaces

2000 ◽  
Vol 166 (1-4) ◽  
pp. 485-491 ◽  
Author(s):  
Hiro Niimi ◽  
Hanyang Yang ◽  
Gerald Lucovsky ◽  
Jeff W Keister ◽  
Jack E Rowe
Keyword(s):  
Barrier Layer ◽  
Tunneling Current ◽  
Layer Model
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