Visualization of buried SiGe quantum dots at cleavages by cross-sectional atomic force microscopy

2004 ◽  
Vol 85 (11) ◽  
pp. 1999-2001 ◽  
Author(s):  
M. S. Dunaevskii ◽  
A. N. Titkov ◽  
Z. F. Krasilnik ◽  
A. V. Novikov ◽  
D. N. Lobanov ◽  
...  
1999 ◽  
Vol 75 (17) ◽  
pp. 2626-2628 ◽  
Author(s):  
A. V. Ankudinov ◽  
A. N. Titkov ◽  
T. V. Shubina ◽  
S. V. Ivanov ◽  
P. S. Kop’ev ◽  
...  

1995 ◽  
Vol 30 (3) ◽  
pp. 678-682 ◽  
Author(s):  
Hee Jeen Kim ◽  
Jae Sung Kim ◽  
Yong Kim ◽  
Moo Sung Kim ◽  
Suk-Ki Min

2008 ◽  
Vol 130 (32) ◽  
pp. 10648-10655 ◽  
Author(s):  
Jennifer F. Campbell ◽  
Ingrid Tessmer ◽  
H. Holden Thorp ◽  
Dorothy A. Erie

1997 ◽  
Vol 482 ◽  
Author(s):  
Y. Cho ◽  
S. Rouvimov ◽  
Y. Kim ◽  
Z. Liliental-Weber ◽  
E. R. Weber

AbstractThe incorporation of nitrogen into sapphire substrates during nitridation was studied by xray photoelectron spectroscopy (XPS). An increase in the intensity of nitrogen 1s peak in XPS was observed upon longer nitridation. The surface morphology of the substrates was characterized by atomic force microscopy (AFM). High resolution electron microscopy (HREM) was employed for structural analysis. The cross sectional TEM showed a thin layer of AlN buried between amorphous AlNxO1−x and sapphire. This is the first direct observation of AlN on sapphire. The TEM images show a deeper penetration depth of nitrogen into a longer nitridated sapphire.


2002 ◽  
Vol 28 (2) ◽  
pp. 139-141
Author(s):  
V. P. Evtikhiev ◽  
O. V. Konstantinov ◽  
E. Yu. Kotel’nikov ◽  
A. V. Matveentsev ◽  
A. N. Titkov ◽  
...  

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