Electrical conduction in light-emitting organic polymer Schottky diodes

2005 ◽  
Vol 98 (12) ◽  
pp. 124504 ◽  
Author(s):  
Faiz Rahman ◽  
Nigel P. Johnson ◽  
Thomas Slight
2008 ◽  
Vol 19 (19) ◽  
pp. 195202 ◽  
Author(s):  
Bayram Butun ◽  
Koray Aydin ◽  
Erkin Ulker ◽  
Stéphanie Cheylan ◽  
Gonçal Badenes ◽  
...  

2019 ◽  
Vol 6 (1) ◽  
Author(s):  
Dipjyoti Das ◽  
Peddaboodi Gopikrishna ◽  
Debasish Barman ◽  
Ramesh Babu Yathirajula ◽  
Parameswar Krishnan Iyer

Abstract White organic/polymer light emitting diode (WOLED/WPLED) processed from solution has attracted significant research interest in recent years due to their low device production cost, device flexibility, easy fabrication over large area including roll to roll and ability to print in various designs and shapes providing enormous design possibilities. Although WOLEDs fabricated using solution process lack their thermally evaporated counterparts in terms of device efficiency, remarkable progress has been made in this regard in recent years by utilizing new materials and device structures. In the present review, we have summarized and extrapolated an excellent association of old and modern concept of cost-effective materials and device structure for realization of white light. In particular, this article demonstrated and focused on design, and development of novel synthesis strategy, mechanistic insights and device engineering for solution process low cost WOLEDs device. Herein, an overview of the prevailing routes towards white light emitting devices (WLEDs) and corresponding materials used, including polymer based WLED, small molecules emitters based thermally activated delayed fluorescence (TADF), perovskite light-emitting diodes (PeLEDs) and hybrid materials based LEDs, color down-converting coatings with corresponding best efficiencies ever realized. We presume that this exhaustive review on WLEDs will offer a broad overview of the latest developments on white SSL and stonework the approach en route for innovations in the immediate future.


Author(s):  
Wentao Li ◽  
Tiezheng Miao ◽  
Baowen Wang ◽  
Jiaxiang Liu ◽  
Xingqiang Lv ◽  
...  

Using conventionally fac-[Ir(C^N)3]-homoleptic or [Ir(C^N)2(L^X)]-bis-heteroleptic iridium(III)-complexes with NIR-phosphorescence (NIR = near infrared) as dopants, the realization of their reliable NIR-OLEDs/PLEDs (organic/polymer light-emitting diodes) with high-performance remains a real challenge. In...


2021 ◽  
Vol 13 (1) ◽  
pp. 128-128

In the Research Article entitled “Transient Analysis of Poly (3,4-Ethylenedioxythiophene) Poly (Styrenesulphonate) (PEDOT: PSS)- Polyfluorene Organic Polymer Layer Light Emitting Diode” published in Micro and Nanosystems, 2020, Vol. 12, No. 3, figure 2 has been revised as figure 3 was incorrectly duplicated in place of figure 2. The correct figure is as follows:


Author(s):  
Siyu Hou ◽  
Jiaxiang Liu ◽  
Baowen Wang ◽  
Tiezheng Miao ◽  
Xingqiang Lv ◽  
...  

Despite the domination of conventional [Ir(C^N)2(L^X)]-bis-heteroleptic iridium(III)-complexes with NIR-phosphorescence (NIR = near infrared) as dopants for reliable NIR-OLEDs/PLEDs (organic/polymer light-emitting diodes), the achievement of their high-performance remains a real challenge....


2017 ◽  
Vol 50 ◽  
pp. 48-56 ◽  
Author(s):  
Akeel M. Kadim

Cadmium telluride CdTe QDs was prepared by chemical reaction and used to fabricate electroluminescence quantum dot hybrid junction device. QD-LED was fabricated using TPD: PMMA/CdTe/Alq3 device which synthesized by phase segregation method. The hybrid white light emitting devices consists, of three-layers deposited successively on the ITO glass substrate; the first layer was of Tetra-Phenyl Diaminobiphenyl (TPD) polymer mixed with polymethyl methacrylate (PMMA) polymers, while the second layer was 0.5wt% of the (CdTe) QDs for hybrid device, whereas the third layer was Tris (8-hydroxyquinoline) aluminium (Alq3). The optical properties of CdTe QDs were considered by UV-Vis. and photoluminescence (PL) spectrometer. The results show that the prepared QDs were nanocrystalline with defects formation. The Eg calculated from PL were 2.25 eV for Cadmium telluride CdTe QDs was prepared by chemical reaction and used to fabricate electroluminescence quantum dot hybrid junction device. QD-LED was fabricated using TPD: PMMA/CdTe/Alq3device which synthesized by phase segregation method. The hybrid white light emitting devices consists, of three-layers deposited successively on the ITO glass substrate; the first layer was of Tetra-Phenyl Diaminobiphenyl (TPD) polymer mixed with polymethyl methacrylate (PMMA) polymers, while the second layer was 0.5wt% of the (CdTe) QDs for hybrid device, whereas the third layer was Tris (8-hydroxyquinoline) aluminium (Alq3). The optical properties of CdTe QDs were measuredby UV-Vis. and photoluminescence (PL) spectrometer. The results show that the prepared QDs were nanocrystalline with defects formation. The Eg calculated from PL were 2.25 eV for CdTe QDs. The generated white light properties with acceptable efficiency using confinement effect that makes the energy gap larger, thus the direction of the light sites are toward the center of white light color. The organic light emitting device (OLED) wasconsidered by room temperature PL and electroluminescence (EL). Current-voltage (I–V) characteristics indicate that the output current is good compared to the few voltage (6 V) used which gives good results to get a generation of white light. The electroluminescence (EL) spectrum of hybrid deviceshows a wide emission band covering the range from 350 - 700 nm. The emissions causing this white luminescence were identified depending on the chromaticity coordinates (CIE 1931) was found (x=0.32, y=0.33). The correlated color temperature (CCT) was found to be about 5886 K. Fabrication of EL-devices from semiconductors material (CdTe QDs) between two layers organic polymer (TPD) and organic molecules (Alq3) were effective in white light generation. The recombination processes and I-V characteristics gives rises to the output current is good compared to the few voltages used which gives good results to become a generation of light.


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