Diverse effects of two-dimensional and step flow growth mode induced microstructures on the magnetic anisotropies of SrRuO3 thin films

2006 ◽  
Vol 89 (12) ◽  
pp. 124104 ◽  
Author(s):  
Y. Z. Yoo ◽  
O. Chmaissem ◽  
S. Kolesnik ◽  
A. Ullah ◽  
L. B. Lurio ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Mode ◽  
Two Dimensional ◽  
Step Flow ◽  
Step Flow Growth

Step Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiC

2013 ◽  
Vol 740-742 ◽  
pp. 201-204 ◽  
Author(s):  
Kanaparin Ariyawong ◽  
Valdas Jokubavicius ◽  
Rickard Liljedahl ◽  
Mikael Syväjärvi
Keyword(s):  
Growth Temperature ◽  
Growth Mode ◽  
Mode Competition ◽  
Two Dimensional ◽  
Step Flow ◽  
Surface Irregularities ◽  
Dimensional Growth ◽  
The Mean ◽  
Homoepitaxial Layers ◽  
Step Flow Growth

The growth of homoepitaxial layers on off-oriented 6H-SiC substrates proceeds via step flow growth. Such epilayers can exhibit irregularities like step bunching, splicing or crossover of steps. The effects of the substrate off-orientation and growth temperature show an influence on formation of surface irregularities. The mean features seem to be given by the growth mode competition of two-dimensional growth to the step-flow growth.

Anisotropic enhancement of flux pinning in Y-Ba-Cu-O thin films grown by the step-flow growth mode

1998 ◽  
Author(s):  
Hanns-Ulrich Habermeier ◽  
T. Haage ◽  
Jorg Zegenhagen ◽  
V. G. Hadjev ◽  
R. Warthmann ◽  
...  
Keyword(s):  
Thin Films ◽  
Flux Pinning ◽  
Growth Mode ◽  
Step Flow ◽  
Step Flow Growth

STEP-FLOW GROWTH OF HETEROEPITAXIAL SrRuO3 THIN FILMS ON 0.04° SrTiO3 (001) VICINAL SUBSTRATES

2008 ◽  
Vol 01 (03) ◽  
pp. 253-257 ◽  
Author(s):  
T. J. ZHU ◽  
S. H. YANG ◽  
X. CHEN ◽  
X. X. LIU ◽  
X. B. ZHAO ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Mode ◽  
Layer By Layer ◽  
Mode Transition ◽  
Two Dimensional ◽  
Step Flow ◽  
Surface Mobility ◽  
Step Flow Growth ◽  
Miscut Angle ◽  
Mode A

We have grown epitaxial SRO thin films of thickness of about 50 nm on the STO (001) substrates with a small miscut angle of 0.04° by step-flow mode. A mode transition from two-dimensional mixed growth of layer-by-layer and step-flow growth to complete step-flow growth was observed, which is associated with the change in the surface mobility of adatoms and the rate of edge diffusion along the steps.

scholarly journals Single-Domain and Atomically Flat Surface of κ-Ga2O3 Thin Films on FZ-Grown ε-GaFeO3 Substrates via Step-Flow Growth Mode

ACS Omega ◽  
2020 ◽  
Vol 5 (45) ◽  
pp. 29585-29592
Author(s):  
Hiroyuki Nishinaka ◽  
Osamu Ueda ◽  
Daisuke Tahara ◽  
Yusuke Ito ◽  
Noriaki Ikenaga ◽  
...  
Keyword(s):  
Thin Films ◽  
Flat Surface ◽  
Single Domain ◽  
Growth Mode ◽  
Step Flow ◽  
Step Flow Growth ◽  
Atomically Flat

ANISOTROPIC ENHANCEMENT OF FLUX PINNING IN Y-BA-CU-O THIN FILMS GROWN BY THE STEP FLOW GROWTH MODE

2000 ◽  
Author(s):  
H. -U. HABERMEIER ◽  
T. HAAGE ◽  
A. S. SOLOVJOV ◽  
V. HADJEV ◽  
R WARTHMANN ◽  
...  
Keyword(s):  
Thin Films ◽  
Flux Pinning ◽  
Growth Mode ◽  
Step Flow ◽  
Step Flow Growth

Effects of Ru vacancies and oxygen synthesis pressures on the formation of nanodomain structures in SrRuO3 thin films

2005 ◽  
Vol 875 ◽  
Author(s):  
Y. Z. Yoo ◽  
O. Chmaissem ◽  
S. Kolesnik ◽  
B. Dabrowski ◽  
C. W. Kimball ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Mode ◽  
Island Growth ◽  
Working Pressure ◽  
Step Flow ◽  
Partial Pressures ◽  
Out Of Plane ◽  
Growth Properties ◽  
Step Flow Growth ◽  
Low Pressures

AbstractSrRuO3 (SRO) thin films were grown on SrTiO3 (100) substrates using the pulsed laser deposition method. The films' growth properties widely changed in response to different working oxygen partial pressures. An island growth mode was dominant for low pressures up to 10 mTorr followed by a step flow growth mode at 60 mTorr and step flow plus 2 D growth at 200 mTorr then reverting back to island growth at 300 mTorr. Significant out-of-plane strains of SRO films were observed for low growth pressures (up to 10 mTorr) but became notably reduced at 60 mTorr and continued to decrease gradually with further pressure increases. Formation of Ru vacancies occurs regardless of the working pressure values and appears to be minimized at 60 mTorr. Highest TC's were obtained in films exhibiting the step flow growth mode. The role of Ru deficiencies in relation to strain, growth mode, and magnetic properties is discussed.

Step-flow growth of perovskite PbTiO 3 thin films epitaxially grown on a miscut SrTiO 3 substrate

1998 ◽  
Author(s):  
Kiyotaka Wasa ◽  
Yoko Haneda ◽  
Toshifumi Sato ◽  
Hideaki Adachi ◽  
Isaku Kanno ◽  
...  
Keyword(s):  
Thin Films ◽  
Step Flow ◽  
Step Flow Growth

Surface evolution on vicinal GaAs(001) surfaces in the transition range from two-dimensional to step-flow growth

1997 ◽  
Vol 81 (6) ◽  
pp. 2611-2620 ◽  
Author(s):  
H. Nörenberg ◽  
L. Däweritz ◽  
P. Schützendübe ◽  
K. Ploog
Keyword(s):  
Two Dimensional ◽  
Transition Range ◽  
Surface Evolution ◽  
Step Flow ◽  
Step Flow Growth

HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices

2014 ◽  
Vol 778-780 ◽  
pp. 210-213
Author(s):  
Birgit Kallinger ◽  
Christian Ehlers ◽  
Patrick Berwian ◽  
Mathias Rommel ◽  
Jochen Friedrich
Keyword(s):  
Hydrogen Chloride ◽  
Point Defects ◽  
Growth Rates ◽  
High Growth ◽  
Growth Mode ◽  
Step Flow ◽  
Bipolar Devices ◽  
Step Flow Growth ◽  
Total Concentrations

The addition of hydrogen chloride (HCl) to our conventional CVD process allows for high growth rates up to 50 μm/h while maintaining the step-flow growth mode. Such epilayers exhibit quite low total concentrations of point defects less than 2 x 1013 cm-3. But, the HCl addition shows an ambivalent influence on the concentration of the lifetime killer defect Z1/2. For low growth rates, the Z1/2 concentration slightly decreases with increasing HCl addition. For higher growth rates, the Z1/2 concentration increases with increasing HCl addition.

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