Effects of Ru vacancies and oxygen synthesis pressures on the formation of nanodomain structures in SrRuO3 thin films

2005 ◽  
Vol 875 ◽  
Author(s):  
Y. Z. Yoo ◽  
O. Chmaissem ◽  
S. Kolesnik ◽  
B. Dabrowski ◽  
C. W. Kimball ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Mode ◽  
Island Growth ◽  
Working Pressure ◽  
Step Flow ◽  
Partial Pressures ◽  
Out Of Plane ◽  
Growth Properties ◽  
Step Flow Growth ◽  
Low Pressures

AbstractSrRuO3 (SRO) thin films were grown on SrTiO3 (100) substrates using the pulsed laser deposition method. The films' growth properties widely changed in response to different working oxygen partial pressures. An island growth mode was dominant for low pressures up to 10 mTorr followed by a step flow growth mode at 60 mTorr and step flow plus 2 D growth at 200 mTorr then reverting back to island growth at 300 mTorr. Significant out-of-plane strains of SRO films were observed for low growth pressures (up to 10 mTorr) but became notably reduced at 60 mTorr and continued to decrease gradually with further pressure increases. Formation of Ru vacancies occurs regardless of the working pressure values and appears to be minimized at 60 mTorr. Highest TC's were obtained in films exhibiting the step flow growth mode. The role of Ru deficiencies in relation to strain, growth mode, and magnetic properties is discussed.

Diverse effects of two-dimensional and step flow growth mode induced microstructures on the magnetic anisotropies of SrRuO3 thin films

2006 ◽  
Vol 89 (12) ◽  
pp. 124104 ◽  
Author(s):  
Y. Z. Yoo ◽  
O. Chmaissem ◽  
S. Kolesnik ◽  
A. Ullah ◽  
L. B. Lurio ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Mode ◽  
Two Dimensional ◽  
Step Flow ◽  
Step Flow Growth

scholarly journals Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates

2001 ◽  
Vol 6 ◽  
Author(s):  
Lianghong Liu ◽  
B. Liu ◽  
Y. Shi ◽  
J.H. Edgar
Keyword(s):  
Thermal Expansion ◽  
Aluminum Nitride ◽  
Optical Microscopy ◽  
Thermal Expansion Coefficient ◽  
Growth Mode ◽  
Island Growth ◽  
Substrate Preparation ◽  
Step Flow ◽  
Step Flow Growth ◽  
Sublimation Growth

The effect of substrate preparation on the sublimation growth of AlN at about 1800 °C and 400 torr on (0001) 6H-SiC was investigated. The AlN grew in the step flow growth mode on an off-axis 6H-SiC substrate with a 6H-SiC epilayer, an island growth mode on as-received substrates, and a 2-D growth mode on substrates first coated with an AlN epitaxial layer by MOCVD. Cracks in the deposited AlN crystal due to the lattice and thermal expansion coefficient mismatches were always observed by SEM and optical microscopy.

AFM Observations on the Growth Mechanisms of Epitaxial Perovskite Oxide SrRuO3 Thin Films

1997 ◽  
Vol 474 ◽  
Author(s):  
R. A. Rao ◽  
Q. Gan ◽  
C. B. Eom
Keyword(s):  
Thin Films ◽  
Growth Mechanism ◽  
Three Dimensional ◽  
Plane Domain ◽  
Perovskite Oxide ◽  
X Ray Diffraction ◽  
Island Growth ◽  
Step Flow ◽  
Atomic Force ◽  
Step Flow Growth

ABSTRACTThe growth mechanism and surface morphology of epitaxial SrRuO3 thin films deposited on exact and vicinal (001) SrTiO3 and exact (001) LaAlO3 substrates has been studied. Vicinal substrates with miscut angle, a, up to 4° toward [010] direction were used. Atomic force microscope images show that the films grown on exact (001) SrTiO3 substrate had a growth mechanism involving two dimensional nucleation. In contrast, characteristic step patterns were observed on the films deposited on vicinal substrates, suggesting that these films had a step flow growth mode. The films deposited on exact (001) LaAlO3 substrates had a three dimensional island growth, due to the incoherence between the film and substrate lattice. These results were found to be consistent with the results of x-ray diffraction analysis of the in-plane domain structure.

Anisotropic enhancement of flux pinning in Y-Ba-Cu-O thin films grown by the step-flow growth mode

1998 ◽  
Author(s):  
Hanns-Ulrich Habermeier ◽  
T. Haage ◽  
Jorg Zegenhagen ◽  
V. G. Hadjev ◽  
R. Warthmann ◽  
...  
Keyword(s):  
Thin Films ◽  
Flux Pinning ◽  
Growth Mode ◽  
Step Flow ◽  
Step Flow Growth

Growth Mode and Defects in Aluminum Nitride Sublimated on (0001) 6H-SiC Substrates

2000 ◽  
Vol 639 ◽  
Author(s):  
Lianghong Liu ◽  
Bei Liu ◽  
Ying Shi ◽  
J. H. Edgar
Keyword(s):  
Substrate Surface ◽  
Surface Preparation ◽  
Growth Mode ◽  
Island Growth ◽  
Substrate Preparation ◽  
Step Flow ◽  
Long Time ◽  
Step Flow Growth ◽  
Sublimation Growth ◽  
Thermal Expansion Coefficient Mismatch

ABSTRACTThe effect of substrate preparation on the sublimation growth of AlN on 6H-SiC was investigated at about 1800°C and 400 torr. Short and long-time sublimation growths of AlN indicated that the nucleation, growth mode, and defects formed depended on the substrate surface preparation. Growth on an off-axis 6H-SiC substrate with 6H-SiC epilayer was in the step flow growth mode in contrast to the island growth mode on as-received substrates, while the 2-D growth was achieved on substrates first coated with an AlN epitaxial layer. Cracks due to the lattice and mainly large thermal expansion coefficient mismatch were always observed in the deposited AlN crystal, as characterized by SEM and optical microscopy.

scholarly journals Single-Domain and Atomically Flat Surface of κ-Ga2O3 Thin Films on FZ-Grown ε-GaFeO3 Substrates via Step-Flow Growth Mode

ACS Omega ◽  
2020 ◽  
Vol 5 (45) ◽  
pp. 29585-29592
Author(s):  
Hiroyuki Nishinaka ◽  
Osamu Ueda ◽  
Daisuke Tahara ◽  
Yusuke Ito ◽  
Noriaki Ikenaga ◽  
...  
Keyword(s):  
Thin Films ◽  
Flat Surface ◽  
Single Domain ◽  
Growth Mode ◽  
Step Flow ◽  
Step Flow Growth ◽  
Atomically Flat

ANISOTROPIC ENHANCEMENT OF FLUX PINNING IN Y-BA-CU-O THIN FILMS GROWN BY THE STEP FLOW GROWTH MODE

2000 ◽  
Author(s):  
H. -U. HABERMEIER ◽  
T. HAAGE ◽  
A. S. SOLOVJOV ◽  
V. HADJEV ◽  
R WARTHMANN ◽  
...  
Keyword(s):  
Thin Films ◽  
Flux Pinning ◽  
Growth Mode ◽  
Step Flow ◽  
Step Flow Growth

Step-flow growth of perovskite PbTiO 3 thin films epitaxially grown on a miscut SrTiO 3 substrate

1998 ◽  
Author(s):  
Kiyotaka Wasa ◽  
Yoko Haneda ◽  
Toshifumi Sato ◽  
Hideaki Adachi ◽  
Isaku Kanno ◽  
...  
Keyword(s):  
Thin Films ◽  
Step Flow ◽  
Step Flow Growth

scholarly journals Step bunching during Si(001) homoepitaxy caused by the surface diffusion anisotropy

2002 ◽  
Vol 749 ◽  
Author(s):  
J. Mysliveček ◽  
C. Schelling ◽  
F. Schäffler ◽  
G. Springholz ◽  
P. Šmilauer ◽  
...  
Keyword(s):  
Kinetic Monte Carlo ◽  
Monte Carlo Model ◽  
Growth Conditions ◽  
Scanning Tunneling ◽  
Diffusion Anisotropy ◽  
Island Growth ◽  
Tunneling Microscopy ◽  
Step Bunching ◽  
Step Flow ◽  
Step Flow Growth

ABSTRACTScanning tunneling microscopy experiments show that the unstable growth morphology observed during molecular beam homoepitaxy on slightly vicinal Si(001) surfaces consists of straight step bunches. The instability occurs under step-flow growth conditions and vanishes both during low-temperature island growth and at high temperatures. An instability with the same characteristics is observed in a 2D Kinetic Monte Carlo model of growth with incorporated Si(001)-like diffusion anisotropy. This provides strong evidence that the diffusion anisotropy destabilizes growth on Si(001) and similar surfaces towards step bunching. This new instability mechanism is operational without any additional step edge barriers.

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