scholarly journals Single-Domain and Atomically Flat Surface of κ-Ga2O3 Thin Films on FZ-Grown ε-GaFeO3 Substrates via Step-Flow Growth Mode

ACS Omega ◽  
2020 ◽  
Vol 5 (45) ◽  
pp. 29585-29592
Author(s):  
Hiroyuki Nishinaka ◽  
Osamu Ueda ◽  
Daisuke Tahara ◽  
Yusuke Ito ◽  
Noriaki Ikenaga ◽  
...  
Keyword(s):  
Thin Films ◽  
Flat Surface ◽  
Single Domain ◽  
Growth Mode ◽  
Step Flow ◽  
Step Flow Growth ◽  
Atomically Flat

Diverse effects of two-dimensional and step flow growth mode induced microstructures on the magnetic anisotropies of SrRuO3 thin films

2006 ◽  
Vol 89 (12) ◽  
pp. 124104 ◽  
Author(s):  
Y. Z. Yoo ◽  
O. Chmaissem ◽  
S. Kolesnik ◽  
A. Ullah ◽  
L. B. Lurio ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Mode ◽  
Two Dimensional ◽  
Step Flow ◽  
Step Flow Growth

Anisotropic enhancement of flux pinning in Y-Ba-Cu-O thin films grown by the step-flow growth mode

1998 ◽  
Author(s):  
Hanns-Ulrich Habermeier ◽  
T. Haage ◽  
Jorg Zegenhagen ◽  
V. G. Hadjev ◽  
R. Warthmann ◽  
...  
Keyword(s):  
Thin Films ◽  
Flux Pinning ◽  
Growth Mode ◽  
Step Flow ◽  
Step Flow Growth

ANISOTROPIC ENHANCEMENT OF FLUX PINNING IN Y-BA-CU-O THIN FILMS GROWN BY THE STEP FLOW GROWTH MODE

2000 ◽  
Author(s):  
H. -U. HABERMEIER ◽  
T. HAAGE ◽  
A. S. SOLOVJOV ◽  
V. HADJEV ◽  
R WARTHMANN ◽  
...  
Keyword(s):  
Thin Films ◽  
Flux Pinning ◽  
Growth Mode ◽  
Step Flow ◽  
Step Flow Growth

Effects of Ru vacancies and oxygen synthesis pressures on the formation of nanodomain structures in SrRuO3 thin films

2005 ◽  
Vol 875 ◽  
Author(s):  
Y. Z. Yoo ◽  
O. Chmaissem ◽  
S. Kolesnik ◽  
B. Dabrowski ◽  
C. W. Kimball ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Mode ◽  
Island Growth ◽  
Working Pressure ◽  
Step Flow ◽  
Partial Pressures ◽  
Out Of Plane ◽  
Growth Properties ◽  
Step Flow Growth ◽  
Low Pressures

AbstractSrRuO3 (SRO) thin films were grown on SrTiO3 (100) substrates using the pulsed laser deposition method. The films' growth properties widely changed in response to different working oxygen partial pressures. An island growth mode was dominant for low pressures up to 10 mTorr followed by a step flow growth mode at 60 mTorr and step flow plus 2 D growth at 200 mTorr then reverting back to island growth at 300 mTorr. Significant out-of-plane strains of SRO films were observed for low growth pressures (up to 10 mTorr) but became notably reduced at 60 mTorr and continued to decrease gradually with further pressure increases. Formation of Ru vacancies occurs regardless of the working pressure values and appears to be minimized at 60 mTorr. Highest TC's were obtained in films exhibiting the step flow growth mode. The role of Ru deficiencies in relation to strain, growth mode, and magnetic properties is discussed.

Step-flow growth of perovskite PbTiO 3 thin films epitaxially grown on a miscut SrTiO 3 substrate

1998 ◽  
Author(s):  
Kiyotaka Wasa ◽  
Yoko Haneda ◽  
Toshifumi Sato ◽  
Hideaki Adachi ◽  
Isaku Kanno ◽  
...  
Keyword(s):  
Thin Films ◽  
Step Flow ◽  
Step Flow Growth

Wet chemical deposition of single crystalline epitaxial manganite thin films with atomically flat surface

2013 ◽  
Vol 534 ◽  
pp. 67-69 ◽  
Author(s):  
Amita Mishra ◽  
Anirban Dutta ◽  
Sayanti Samaddar ◽  
Anjan K. Gupta
Keyword(s):  
Thin Films ◽  
Flat Surface ◽  
Chemical Deposition ◽  
Single Crystalline ◽  
Wet Chemical ◽  
Atomically Flat

HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices

2014 ◽  
Vol 778-780 ◽  
pp. 210-213
Author(s):  
Birgit Kallinger ◽  
Christian Ehlers ◽  
Patrick Berwian ◽  
Mathias Rommel ◽  
Jochen Friedrich
Keyword(s):  
Hydrogen Chloride ◽  
Point Defects ◽  
Growth Rates ◽  
High Growth ◽  
Growth Mode ◽  
Step Flow ◽  
Bipolar Devices ◽  
Step Flow Growth ◽  
Total Concentrations

The addition of hydrogen chloride (HCl) to our conventional CVD process allows for high growth rates up to 50 μm/h while maintaining the step-flow growth mode. Such epilayers exhibit quite low total concentrations of point defects less than 2 x 1013 cm-3. But, the HCl addition shows an ambivalent influence on the concentration of the lifetime killer defect Z1/2. For low growth rates, the Z1/2 concentration slightly decreases with increasing HCl addition. For higher growth rates, the Z1/2 concentration increases with increasing HCl addition.

scholarly journals Layer-by-layer growth and growth-mode transition of SrRuO3 thin films on atomically flat single-terminated SrTiO3 (111) surfaces

2009 ◽  
Vol 311 (14) ◽  
pp. 3771-3774 ◽  
Author(s):  
Jaewan Chang ◽  
Yoon-Seok Park ◽  
Jong-Woo Lee ◽  
Sang-Koog Kim
Keyword(s):  
Thin Films ◽  
Layer Growth ◽  
Growth Mode ◽  
Layer By Layer ◽  
Mode Transition ◽  
Atomically Flat

scholarly journals Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates

2001 ◽  
Vol 6 ◽  
Author(s):  
Lianghong Liu ◽  
B. Liu ◽  
Y. Shi ◽  
J.H. Edgar
Keyword(s):  
Thermal Expansion ◽  
Aluminum Nitride ◽  
Optical Microscopy ◽  
Thermal Expansion Coefficient ◽  
Growth Mode ◽  
Island Growth ◽  
Substrate Preparation ◽  
Step Flow ◽  
Step Flow Growth ◽  
Sublimation Growth

The effect of substrate preparation on the sublimation growth of AlN at about 1800 °C and 400 torr on (0001) 6H-SiC was investigated. The AlN grew in the step flow growth mode on an off-axis 6H-SiC substrate with a 6H-SiC epilayer, an island growth mode on as-received substrates, and a 2-D growth mode on substrates first coated with an AlN epitaxial layer by MOCVD. Cracks in the deposited AlN crystal due to the lattice and thermal expansion coefficient mismatches were always observed by SEM and optical microscopy.

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