Effects of the permanent dipoles of self-assembled monolayer-treated insulator surfaces on the field-effect mobility of a pentacene thin-film transistor

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

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Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

MRS Proceedings ◽

10.1557/proc-297-901 ◽

1993 ◽

Vol 297 ◽

Cited By ~ 3

Author(s):

Byung Chul Ahn ◽

Jeong Hyun Kim ◽

Dong Gil Kim ◽

Byeong Yeon Moon ◽

Kwang Nam Kim ◽

...

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Atmospheric Pressure ◽

Thin Film Transistors ◽

Field Effect ◽

Low Cost ◽

Thin Film Transistor ◽

Field Effect Mobility ◽

Silicon Thin Film ◽

Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

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Non-substituted fused bis-tetracene based thin-film transistor with self-assembled monolayer hybrid dielectrics

Frontiers of Materials Science ◽

10.1007/s11706-020-0518-4 ◽

2020 ◽

Vol 14 (3) ◽

pp. 314-322

Author(s):

Baolin Zhao ◽

Mikhail Feofanov ◽

Dominik Lungerich ◽

Hyoungwon Park ◽

Tobias Rejek ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Self Assembled Monolayer ◽

Self Assembled

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Performances of Sexithiophene Based Thin-Film Transistor Using Self-Assembled Monolayers

MRS Proceedings ◽

10.1557/proc-488-407 ◽

1997 ◽

Vol 488 ◽

Cited By ~ 6

Author(s):

J. Collet ◽

O. Tharaud ◽

C. Legrand ◽

A. Chapoton ◽

D. Vuillaume

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

High Performance ◽

Film Formation ◽

Substrate Surface ◽

High Surface ◽

Thin Film Transistor ◽

Subthreshold Slope ◽

Self Assembled Monolayer ◽

Self Assembled

AbstractHigh performance thin-film transistors (TFT) made of conducting oligomers are obtained when the organic films are well ordered at a molecular level. Highly ordered films are obtained provided that oligomers have a sufficient mobility on the substrate surface during film formation. One possible way to fulfill such a condition is to evaporate oligomers on heated substrates [1,2]. In this work, we suggest that a high surface mobility is obtained by a chemical functionalization of the silicon dioxide surface, and the corresponding improvements of the TFT performances are evidenced. A self-assembled monolayer of octadecyltrichlorosilane (OTS) was deposited on the SiO2 by chemisorption from solution before the evaporation of sexithiophene film. Room temperature current-voltage measurements indicate that the presence of the OTS monolayer improves TFT performances : threshold voltage is decreased, subthreshold slope is decreased, a high current ratio Ion/Ioff is obtained for a reduced gate voltage excursion, the fieldeffect mobility is slightly increased. We have also fabricated and characterized a nanometer scale organic FET (gate length = 50 nm) made of 6T films and only with a self-assembled monolayer as the insulating film between the degenerated silicon substrate (gate) and the conducting channel (no thick SiO2, we call it « oxide-free » organic FET). Performances of this nanometer size organic FETs are the following : subthreshold slope of 0.35V/dec, threshold voltage of −1.3V, effective mobility of 2×10−4 cm2/V.s.

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Improvement of rubrene thin film transistor with self assembled monolayer of octadecyltrichlorosilane (OTS)

10.1063/1.4710331 ◽

2012 ◽

Cited By ~ 1

Author(s):

S. Sinha ◽

C. -H. Wang ◽

A. K. M. Maidul Islam ◽

Y. -W. Yang ◽

M. Mukherjee

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Self Assembled Monolayer ◽

Self Assembled

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Control of Charge Trap Density in Polymer Thin Film Transistor Using Self-assembled Monolayer with Different Alkyl Chain Length

Polymer Korea ◽

10.7317/pk.2019.43.4.553 ◽

2019 ◽

Vol 43 (4) ◽

pp. 553-558

Author(s):

Jun Hwa Park ◽

Yu Ra Choi ◽

Bo Yeon Min ◽

Jun Young Moon ◽

Jae Won Lee ◽

...

Keyword(s):

Thin Film ◽

Chain Length ◽

Alkyl Chain ◽

Thin Film Transistor ◽

Alkyl Chain Length ◽

Trap Density ◽

Self Assembled Monolayer ◽

Polymer Thin Film ◽

Charge Trap ◽

Self Assembled

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Improved Performance p-type Polymer (P3HT) / n-type Nanotubes (WS2) Electrolyte Gated Thin-Film Transistor

MRS Advances ◽

10.1557/adv.2018.311 ◽

2018 ◽

Vol 3 (27) ◽

pp. 1525-1533 ◽

Cited By ~ 1

Author(s):

Eleonora Macchia ◽

Alla Zak ◽

Rosaria Anna Picca ◽

Kyriaki Manoli ◽

Cinzia Di Franco ◽

...

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Field Effect ◽

Thin Film Transistor ◽

Fold Increase ◽

Field Effect Mobility ◽

Figures Of Merit ◽

Electronic Channel ◽

Improved Performance ◽

P Type

ABSTRACTThis work decribes the enhancement of the electrical figures of merit of an Electrolyte Gated Thin-Film Transistor (EG-TFT) comprising a nanocomposite of n-type tungsten disulfide (WS2) nanotubes (NTs) dispersed in a regio-regular p-type poly(3-hexylthiophene-2,5-diyl) (P3HT) polymeric matrix. P3HT/WS2 nanocomposites loaded with different concentrations of NTs, serving as EG-TFTs electronic channel materials have been studied and the formulation has been optimized. The resulting EG-TFTs figures of merit (field-effect mobility, threshold voltage and on-off ratio) are compared with those of the device comprising a bare P3HT semiconducting layer. The optimized P3HT/WS2 nanocomposite, comprising a 60% by weight of NTs, results in an improvement of all the elicited figures of merit with a striking ten-fold increase in the field-effect mobility and the on/off ratio along with a sizable enhancement of the in-water operational stability of the device.

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Single-Crystal Thin Film Transistor by Grain-Filter Location-Controlled Excimer-Laser Crystallization

MRS Proceedings ◽

10.1557/proc-685-d12.3.1 ◽

2001 ◽

Vol 685 ◽

Cited By ~ 1

Author(s):

Barry D. van Dijk ◽

Paul Ch. Van der Wilt ◽

G. J. Bertens ◽

Lis.K. Nanver ◽

Ryoichi Ishihara

Keyword(s):

Thin Film ◽

Chemical Mechanical Polishing ◽

Field Effect ◽

Thin Film Transistor ◽

Subthreshold Swing ◽

Filter Method ◽

Field Effect Mobility ◽

Laser Crystallization ◽

Excimer Laser Crystallization ◽

Grain Filters

AbstractThin film transistors (TFTs) are fabricated inside a large, location-controlled, silicon grain, fabricated with the grain-filter method. In a first experiment TFTs with high field-effect mobility for electrons of 430 cm2/Vs are fabricated. The off-current and subthreshold swing have high values of 60 pA and 1.2 V/dec, respectively. The grain-filter is improved by doping the channel and by planarizing the grain-filter by chemical mechanical polishing (CMP). TFTs fabricated in CMP-planarized grain-filters have mobility, off-current, and subthreshold swing of 430 cm2/Vs, 0.3 pA, and 0.29 V/dec, respectively, which compares well with the characteristics for SOI TFTs.

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