Improved Performance p-type Polymer (P3HT) / n-type Nanotubes (WS2) Electrolyte Gated Thin-Film Transistor

MRS Advances ◽  
2018 ◽  
Vol 3 (27) ◽  
pp. 1525-1533 ◽  
Author(s):  
Eleonora Macchia ◽  
Alla Zak ◽  
Rosaria Anna Picca ◽  
Kyriaki Manoli ◽  
Cinzia Di Franco ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Fold Increase ◽  
Field Effect Mobility ◽  
Figures Of Merit ◽  
Electronic Channel ◽  
Improved Performance ◽  
P Type

ABSTRACTThis work decribes the enhancement of the electrical figures of merit of an Electrolyte Gated Thin-Film Transistor (EG-TFT) comprising a nanocomposite of n-type tungsten disulfide (WS2) nanotubes (NTs) dispersed in a regio-regular p-type poly(3-hexylthiophene-2,5-diyl) (P3HT) polymeric matrix. P3HT/WS2 nanocomposites loaded with different concentrations of NTs, serving as EG-TFTs electronic channel materials have been studied and the formulation has been optimized. The resulting EG-TFTs figures of merit (field-effect mobility, threshold voltage and on-off ratio) are compared with those of the device comprising a bare P3HT semiconducting layer. The optimized P3HT/WS2 nanocomposite, comprising a 60% by weight of NTs, results in an improvement of all the elicited figures of merit with a striking ten-fold increase in the field-effect mobility and the on/off ratio along with a sizable enhancement of the in-water operational stability of the device.

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

Thin Film Transistors on Plastic Substrates Using Silicon Deposited by Microwave ECR-CVD

2003 ◽  
Vol 769 ◽  
Author(s):  
Lihong Teng ◽  
Wayne A. Anderson
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Silicon Films ◽  
Subthreshold Swing ◽  
Field Effect Mobility ◽  
Current Ratio ◽  
Saturation Field ◽  
Plastic Substrates

AbstractThe properties of thin film transistors (TFT's) on plastic substrates with active silicon films deposited by microwave ECR-CVD were studied. Two types of plastic were used, PEEK and polyimide. The a-Si:H TFT deposited at 200°C on polyimide substrates showed a saturation field effect mobility of 4.5 cm2/V-s, a threshold voltage of 3.7 V, a subthreshold swing of 0.69 V/dec and an ON/OFF current ratio of 7.9×106, while the TFT fabricated on PEEK at 200°C showed a saturation field effect mobility of 3.9 cm2/V-s, a threshold voltage of 4.1 V, a subthreshold swing of 0.73 V/dec and an ON/OFF current ratio of 4×106. Comparison is made to TFT's with the Si deposited at 400°C on glass.

Single-Crystal Thin Film Transistor by Grain-Filter Location-Controlled Excimer-Laser Crystallization

2001 ◽  
Vol 685 ◽  
Author(s):  
Barry D. van Dijk ◽  
Paul Ch. Van der Wilt ◽  
G. J. Bertens ◽  
Lis.K. Nanver ◽  
Ryoichi Ishihara
Keyword(s):  
Thin Film ◽  
Chemical Mechanical Polishing ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Subthreshold Swing ◽  
Filter Method ◽  
Field Effect Mobility ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Grain Filters

AbstractThin film transistors (TFTs) are fabricated inside a large, location-controlled, silicon grain, fabricated with the grain-filter method. In a first experiment TFTs with high field-effect mobility for electrons of 430 cm2/Vs are fabricated. The off-current and subthreshold swing have high values of 60 pA and 1.2 V/dec, respectively. The grain-filter is improved by doping the channel and by planarizing the grain-filter by chemical mechanical polishing (CMP). TFTs fabricated in CMP-planarized grain-filters have mobility, off-current, and subthreshold swing of 430 cm2/Vs, 0.3 pA, and 0.29 V/dec, respectively, which compares well with the characteristics for SOI TFTs.

scholarly journals Influence of the dielectric constant of a polyvinyl phenol insulator on the field-effect mobility of a pentacene-based thin-film transistor

2005 ◽  
Vol 87 (15) ◽  
pp. 152105 ◽  
Author(s):  
Yunseok Jang ◽  
Do Hwan Kim ◽  
Yeong Don Park ◽  
Jeong Ho Cho ◽  
Minkyu Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Field Effect Mobility

scholarly journals Influence of Plasma Treatment to the Performance of Amorphous IGZO based Flexible Thin Film Transistors

2017 ◽  
Author(s):  
Long-long Chen ◽  
Xiang Sun ◽  
Ji-feng Shi ◽  
Xi-feng Li ◽  
Xing-wei Ding ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Treatment Time ◽  
Gate Insulator ◽  
Field Effect Mobility ◽  
Flexible Displays ◽  
Plasma Species

Thin film transistors (TFTs) using In-Ga-Zn Oxide (IGZO) as active layer and the gate insulator was treated with NH3 plasma and N2O plasma, respectively, which is fabricated on flexible PI substrate in this work. The performance of IGZO TFTs with different plasma species and treatment time are investigated and compared. The experiment results show that the plasma species and treatment time play an important role in the threshold voltage, field-effect mobility, Ion/Ioff ratio, sub-threshold swing (SS) and bias stress stability of the devices. The TFT with a 10 seconds NH3 plasma treatment shows the best performance; specifically, threshold voltage of 0.34 V, field-effect mobility of 15.97 cm2/Vs, Ion/Ioff ratio of 6.33×107, and sub-threshold swing of 0.36 V/dec. The proposed flexible IGZO-TFTs in this paper can be used as driving devices in the next-generation flexible displays.

Improved Thin Film Transistor (TFT) performance using fractionated Poly-3-hexylthiophene (P3HT)

2001 ◽  
Vol 708 ◽  
Author(s):  
Munira Raja ◽  
Giles Lloyd ◽  
Naser Sedghi ◽  
Rafaella di Lucrezia ◽  
Simon J. Higgins ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Schottky Diodes ◽  
Thin Film Transistor ◽  
Drift Mobility ◽  
Process Conditions ◽  
Field Effect Mobility ◽  
Lower Field ◽  
The Third ◽  
Residual Catalyst

ABSTRACTBy using the Trznadel method, it has been possible to increase molecular weight, the regio-regularity, and probably to decrease the residual catalyst of poly-3-hexylthiophene thin films. The drift mobility of holes, normal to the surface of cast films, in air, has been found using Schottky diodes, and field-effect mobility has been measured with Thin-Film Transistors. Three types of film have been studied using the two methods of assessing mobility. The as-synthesised films are compared with those that have been fractionated. The third set of films involves doping with 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ). The doped films show a field effect mobility of 0.2 cm2V-1s-1: all others being lower. Field effect mobility is approximately two orders of magnitude greater than that in the bulk normal to the plane of the film. Doping levels in the films are found to be similar, probably because of the process conditions.

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