Back side thermal imaging of integrated circuits at high spatial resolution

Context. Spatially resolved continuum observations of planet-forming disks show prominent ring and gap structures in their dust distribution. However, the picture from gas observations is much less clear and constraints on the radial gas density structure (i.e. gas gaps) remain rare and uncertain. Aims. We want to investigate the importance of thermo-chemical processes for the interpretation of high-spatial-resolution gas observations of planet-forming disks and their impact on the derived gas properties. Methods. We applied the radiation thermo-chemical disk code PRODIMO (PROtoplanetary DIsk MOdel) to model the dust and gas disk of HD 163296 self-consistently, using the DSHARP (Disk Substructure at High Angular Resolution) gas and dust observations. With this model we investigated the impact of dust gaps and gas gaps on the observables and the derived gas properties, considering chemistry, and heating and cooling processes. Results. We find distinct peaks in the radial line intensity profiles of the CO line data of HD 163296 at the location of the dust gaps. Our model indicates that those peaks are not only a consequence of a gas temperature increase within the gaps but are mainly caused by the absorption of line emission from the back side of the disk by the dust rings. For two of the three prominent dust gaps in HD 163296, we find that thermo-chemical effects are negligible for deriving density gradients via measurements of the rotation velocity. However, for the gap with the highest dust depletion, the temperature gradient can be dominant and needs to be considered to derive accurate gas density profiles. Conclusions. Self-consistent gas and dust thermo-chemical modelling in combination with high-quality observations of multiple molecules are necessary to accurately derive gas gap depths and shapes. This is crucial to determine the origin of gaps and rings in planet-forming disks and to improve the mass estimates of forming planets if they are the cause of the gap.

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Reliability optimization for wide bandgap devices: Recent developments in high-spatial resolution thermal imaging of GaN devices

2005 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2005.1596076 ◽

2006 ◽

Cited By ~ 3

Author(s):

M. Kuball ◽

M.J. Uren ◽

T. Martin

Keyword(s):

Spatial Resolution ◽

Thermal Imaging ◽

High Spatial Resolution ◽

Wide Bandgap ◽

Reliability Optimization ◽

Recent Developments

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High Resolution Thermal Imaging of Integrated Circuits

MRS Proceedings ◽

10.1557/proc-1022-ii06-02 ◽

2007 ◽

Vol 1022 ◽

Author(s):

Gilles Tessier ◽

Mathieu Bardoux ◽

Céline Filloy ◽

Danièle Fournier

Keyword(s):

High Resolution ◽

Integrated Circuits ◽

Spatial Resolution ◽

Thermal Imaging ◽

Optical Method ◽

Near Infrared ◽

Silicon Substrates ◽

Active Layers ◽

Ultraviolet Range ◽

Interesting Solution

AbstractThermoreflectance is an non contact optical method using the local reflectivity variations induced by heating to infer temperature mappings, and can be conducted at virtually any wavelength. In the visible, the technique is now well established. It can probe temperatures through several micrometers of transparent encapsulation layers, with sub-micron spatial resolution and 100 mK thermal resolution. In the ultraviolet range, dielectric encapsulation layers are opaque and thermoreflectance gives access to the surface temperature. In the near infrared, thermoreflectance is an interesting solution to examine chips turned upside down, since these wavelengths can penetrate through silicon substrates and give access to the temperature of the active layers themselves. Here, we explore the possibilities of each wavelength range and detail the CCD-based thermal imaging tools dedicated to the high resolution inspection of integrated circuits.

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High-spatial-resolution x-ray microanalysis of Al-2wt.% Cu aluminum thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100153051 ◽

1989 ◽

Vol 47 ◽

pp. 216-217

Author(s):

A. D. Romig ◽

D. R. Frear ◽

T. J. Headley

Keyword(s):

Integrated Circuits ◽

Grain Boundary ◽

Spatial Resolution ◽

High Spatial Resolution ◽

Copper Alloys ◽

X Ray ◽

Cu Films ◽

Grain Boundary Transport ◽

Film Form ◽

Si Wafer

Aluminum - 2 wt.% copper alloys are commonly used in thin film form as interconnect metallization lines for integrated circuits. Experience has shown that the addition of the Cu to the Al, albeit at a decrease in conductivity, makes the metallizations more resistant to failure by electromigration. However, the mechanism by which Cu increases the resistance to electromigration has never been positively identified. One theory proposes that Cu coats the Al grain boundaries (boundaries are enriched in Cu) and retards grain boundary diffusion thereby reducing electromigration. Another theory suggests that a continuous thin layer of CuAl2 forms along the boundaries also reducing grain boundary transport and therefore the tendency to electromigrate. Recently, Frear et al. have reported on a detailed set of experiments to examine these theories from a microstructural viewpoint. Here, the details of the high spatial resolution microanalysis done to support the study of Fear, et al. are reported.Al- 2wt.% Cu was magnetron sputtered onto a borosilicate glass (BSG) coated (100) Si wafer. The Al-Cu films were sputtered at room temperature from a single source under an argon atmosphere at a deposition rate of 100 nm/min. Films 400 and 800 nm thick were prepared. The films were annealed under a 15% hydrogen forming gas (reducing) at 425°C for 35 min.

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High spatial resolution AEM observations of yttrium segregation in chromia scales grown on Co-45%Cr

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100144103 ◽

1986 ◽

Vol 44 ◽

pp. 518-519

Author(s):

K. Przybylski ◽

A. J. Garratt-Reed ◽

G. J. Yurek

Keyword(s):

Spatial Resolution ◽

Outer Surface ◽

Maximum Concentration ◽

High Spatial Resolution ◽

Reactive Elements ◽

Chromia Scales

The addition of so-called “reactive” elements such as yttrium to alloys is known to enhance the protective nature of Cr2O3 or Al2O3 scales. However, the mechanism by which this enhancement is achieved remains unclear. An A.E.M. study has been performed of scales grown at 1000°C for 25 hr. in pure O2 on Co-45%Cr implanted at 70 keV with 2x1016 atoms/cm2 of yttrium. In the unoxidized alloys it was calculated that the maximum concentration of Y was 13.9 wt% at a depth of about 17 nm. SIMS results showed that in the scale the yttrium remained near the outer surface.

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Integration of Core-Edge Spectroscopy Methods for the Study of Polymers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010016323x ◽

1996 ◽

Vol 54 ◽

pp. 154-155

Author(s):

E. G. Rightor

Keyword(s):

Excited State ◽

Polymer Blends ◽

Gas Phase ◽

Spatial Resolution ◽

High Spatial Resolution ◽

Electronic States ◽

Core Electron ◽

Bulk Solids ◽

Development Application

Core edge spectroscopy methods are versatile tools for investigating a wide variety of materials. They can be used to probe the electronic states of materials in bulk solids, on surfaces, or in the gas phase. This family of methods involves promoting an inner shell (core) electron to an excited state and recording either the primary excitation or secondary decay of the excited state. The techniques are complimentary and have different strengths and limitations for studying challenging aspects of materials. The need to identify components in polymers or polymer blends at high spatial resolution has driven development, application, and integration of results from several of these methods.

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