Temperature dependence of the tunneling current in metal-oxide-semiconductor devices due to the coupling between the longitudinal and transverse components of the electron thermal energy

Oxide Semiconductor

Image Force Effect on Tunneling Current for Ultra Thin High-K Dielectric Material Al2O3 Based Metal Oxide Semiconductor Devices

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2015.1812 ◽

2015 ◽

Vol 10 (5) ◽

pp. 645-648 ◽

Cited By ~ 16

Author(s):

N. P. Maity ◽

R. Maity ◽

R. K. Thapa ◽

S. Baishya

Keyword(s):

Metal Oxide ◽

Dielectric Material ◽

Semiconductor Devices ◽

Tunneling Current ◽

Image Force ◽

Oxide Semiconductor ◽

Force Effect ◽

High K ◽

High K Dielectric

Fully Quantum-Mechanical Calculation of Hole Direct Tunneling Current in Ultrathin Gate Oxide p-Channel Metal-Oxide-Semiconductor Devices

10.1143/jjap.41.552 ◽

2002 ◽

Vol 41 (Part 1, No. 2A) ◽

pp. 552-556 ◽

Cited By ~ 3

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Gate Oxide ◽

Quantum Mechanical Calculation ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Calculation ◽

Direct Tunneling Current

Quantum-Mechanical Simulation of Gate Tunneling Current in Accumulated n-Channel Metal-Oxide-Semiconductor Devices with n+-Polysilicon Gates

10.1143/jjap.41.5094 ◽

2002 ◽

Vol 41 (Part 1, No. 8) ◽

pp. 5094-5097 ◽

Cited By ~ 1

Author(s):

Hideyuki Iwata ◽

Toshihiro Matsuda ◽

Takashi Ohzone

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Simulation ◽

Gate Tunneling

Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

Applied Physics Letters ◽

10.1063/1.4968824 ◽

2016 ◽

Vol 109 (22) ◽

pp. 223104 ◽

Cited By ~ 10

Author(s):

Yanbin An ◽

Aniruddh Shekhawat ◽

Ashkan Behnam ◽

Eric Pop ◽

Ant Ural

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Oxide Semiconductor ◽

Quantum Capacitance ◽

Gate Electrodes ◽

Gate Tunneling

Effect of Image Force on Tunneling Current for Ultra Thin Oxide Layer Based Metal Oxide Semiconductor Devices

Nanoscience and Nanotechnology Letters ◽

10.1166/nnl.2015.1970 ◽

2015 ◽

Vol 7 (4) ◽

pp. 331-333 ◽

Cited By ~ 6

Author(s):

N. P. Maity ◽

R. Maity ◽

R. K. Thapa ◽

S. Baishya

Keyword(s):

Metal Oxide ◽

Oxide Layer ◽

Semiconductor Devices ◽

Tunneling Current ◽

Image Force ◽

Oxide Semiconductor ◽

Thin Oxide Layer ◽

Thin Oxide

Temperature dependence of electron trapping in metal‐oxide‐semiconductor devices as a function of the injection mode

Journal of Applied Physics ◽

10.1063/1.341727 ◽

1988 ◽

Vol 64 (4) ◽

pp. 2150-2152 ◽

Cited By ~ 17

Author(s):

G. Sh. Gildenblat ◽

C.‐L. Huang ◽

S. A. Grot

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

Electron Trapping ◽

Injection Mode

Fully Quantum-Mechanical Modeling of Tunneling Current in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Devices

10.1143/jjap.40.4496 ◽

2001 ◽

Vol 40 (Part 1, No. 7) ◽

pp. 4496-4500 ◽

Cited By ~ 8

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Gate Oxide ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Modeling

Fully Quantum-Mechanical Calculation of Gate Tunneling Current in Ultrathin Silicon-on-Insulator Metal-Oxide-Semiconductor Devices

10.1143/jjap.40.l600 ◽

2001 ◽

Vol 40 (Part 2, No. 6B) ◽

pp. L600-L602

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Quantum Mechanical Calculation ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Calculation ◽

Gate Tunneling

Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices

Applied Physics Letters ◽

10.1063/1.123060 ◽

1999 ◽

Vol 74 (3) ◽

pp. 457-459 ◽

Cited By ~ 183

Author(s):

Leonard F. Register ◽

Elyse Rosenbaum ◽

Kevin Yang

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Semiconductor Devices ◽

Tunneling Current ◽

Oxide Semiconductor ◽

Analytic Model ◽

Direct Tunneling ◽

Direct Tunneling Current

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Engineering