Nb-doped ZnO thin films were fabricated on glass substrates by using co-sputtering with direct-current and radio frequency magnetron sputtering. The structures, optical and electrical performances of Nb-doped ZnO thin films were investigated. The results showed that all thin films have (0 0 2) [Formula: see text]-axis preferential orientation. The minimum resistivity of [Formula: see text][Formula: see text]cm and the maximum carrier concentration of [Formula: see text][Formula: see text][Formula: see text] were obtained at the direct-current sputtering power of 10[Formula: see text]W, respectively. Nb-doped ZnO thin films have also shown high average transmittance of 89.6%, and lower surface roughness of 2.74[Formula: see text]nm. Meanwhile, a distinct absorption edge in the ultraviolet range of 300–400[Formula: see text]nm was observed in absorbance, the optical band gap of Nb-doped ZnO thin films illustrates an increased tendency with increasing Nb concentration.
Low resistivity Ga-doped ZnO thin films of less than 100nm thickness prepared by ion plating with direct current arc discharge
