scholarly journals The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

2008 ◽  
Vol 103 (8) ◽  
pp. 084110 ◽  
Author(s):  
A. Giussani ◽  
O. Seifarth ◽  
P. Rodenbach ◽  
H.-J. Müssig ◽  
P. Zaumseil ◽  
...  
Keyword(s):  
Support Systems ◽  
Growth Behavior ◽  
Lattice Oxygen ◽  
Initial Growth ◽  
Single Crystalline

Controlling the initial growth behavior of SrTiO3 films by interposing Al2O3 layers between the film and the Ru substrate

2012 ◽  
Vol 22 (30) ◽  
pp. 15037 ◽  
Author(s):  
Woongkyu Lee ◽  
Jeong Hwan Han ◽  
Sang Woon Lee ◽  
Sora Han ◽  
Woo Jin Jeon ◽  
...  
Keyword(s):  
Growth Behavior ◽  
Initial Growth

Single Crystalline Nickel Nanorods Inside Carbon Nanotubes: Growth Behavior, Structure, and Magnetic Properties

2005 ◽  
Vol 5 (4) ◽  
pp. 596-600 ◽  
Author(s):  
Pawan K. Tyagi ◽  
Abha Misra ◽  
Manoj K. Singh ◽  
E. Titus ◽  
D. S. Misra ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Magnetic Properties ◽  
Growth Behavior ◽  
Single Crystalline

scholarly journals Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates

2007 ◽  
Vol 90 (1) ◽  
pp. 011906 ◽  
Author(s):  
C. Liu ◽  
S. H. Chang ◽  
T. W. Noh ◽  
M. Abouzaid ◽  
P. Ruterana ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Behavior ◽  
Zno Thin Films ◽  
Initial Growth ◽  
Microstructural Properties

Initial Growth Behavior and Deposition Mechanism of Pulse Electrodepositing Ni-W-P/CeO2-SiO2 Composites

2011 ◽  
Vol 4 (3) ◽  
pp. 1072-1077 ◽  
Author(s):  
Ruidong Xu ◽  
Junli Wang ◽  
Yuzhi Zhang ◽  
Jianfeng Zhou
Keyword(s):  
Growth Behavior ◽  
Initial Growth ◽  
Deposition Mechanism

Initial Growth Behavior of Ultra-Thin c-Axis-Oriented Epitaxial SrBi2Ta2O9 films on SrTuO3

2005 ◽  
Vol 902 ◽  
Author(s):  
Kenji Takahashi ◽  
Muneyasu Suzuki ◽  
Mamoru Yoshimoto ◽  
Hiroshi Funakubo
Keyword(s):  
Substrate Surface ◽  
Film Surface ◽  
Chemical Vapor ◽  
Single Step ◽  
Growth Behavior ◽  
Unit Cell ◽  
Atomic Scale ◽  
Growth Unit ◽  
Atomic Step ◽  
Initial Growth

Abstractc-axis-oriented epitaxial SrBi2Ta2O9 ultra-thin films were grown by pulse-gas-introduced metalorganic chemical vapor deposition (pulsed-MOCVD) on (100)SrTiO3 single crystal substrates with atomic scale step structure and their growth behavior was investigated by atomic force microscopy (AFM) and transmission electron microscopy (TEM). Minimum growth unit was found to be “ghalf-unit-cell” of SrBi2Ta2O9. Height of steps and width of terraces observed at SrBi2Ta2O9 film surface were in good agreement with those at SrTiO3 substrate surface. This shape transfer was induced by lattice displacement of SrBi2Ta2O9 along c-direction formed at atomic step on SrTiO3 substrate. In-plane growth of half-unit-cell SrBi2Ta2O9 2D-islands striding across the step walls was observed. It was considered to be a special phenomenon for c-axis-oriented films of layer-structured compounds due to their large crystal anisotropy and/or several times larger half-unit-cell height than single step one of SrTiO3.

The Growth of β-SiC on Si and Poly-Si on β-SiC by Rapid Thermal Chemical Vapor Deposition

1997 ◽  
Vol 470 ◽  
Author(s):  
C. W. Liu ◽  
J. C. Sturm
Keyword(s):  
Chemical Vapor Deposition ◽  
Heterojunction Bipolar Transistors ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Initial Growth ◽  
Initial Surface ◽  
Single Crystalline ◽  
Thermal Chemical Vapor Deposition ◽  
Si Films

ABSTRACTThe growth properties of β-SiC on (100) Si grown by rapid thermal chemical vapor deposition, using a single precursor (methylsilane) without an initial surface carbonization step, were investigated. An optimun growth temperature at 800°C was found to grow single crystalline SiC. The single crystalline SiC films were used to be the buffer layers for the growth of subsequent poly Si films. For the poly Si grown at low temperature (625°C), the (110) Si diffraction was found to be the dominant peak in the X-ray diffraction spectra at the initial growth stage, while the poly Si grown on oxide was dominated by (111) texture. A small average misfit (4 %) between (110) Si planes and (100) SiC planes was proposed to explain this effect. To apply the Si/SiC/Si multilayers, SiC/Si heterojunction bipolar transistors (HBT's) were fabricated and compared to Si bipolar junction transistors.

Initial growth behavior of Cu(In,Ga)Se2 on molybdenum substrates

2003 ◽  
Vol 259 (1-2) ◽  
pp. 47-51 ◽  
Author(s):  
T. Schlenker ◽  
H.W. Schock ◽  
J.H. Werner
Keyword(s):  
Growth Behavior ◽  
Initial Growth

Nucleation and Initial-Growth Behavior of Thin-Film Deposits

1967 ◽  
Vol 4 (5) ◽  
pp. 209-218 ◽  
Author(s):  
B. Lewis ◽  
D. S. Campbell
Keyword(s):  
Thin Film ◽  
Growth Behavior ◽  
Initial Growth

Microstructural properties and initial growth behavior of InN nanobats grown on a Si(111) substrate

2010 ◽  
Vol 312 (5) ◽  
pp. 662-666 ◽  
Author(s):  
Y.H. Kim ◽  
W.S. Yun ◽  
H. Ruh ◽  
C.S. Kim ◽  
J.W. Kim ◽  
...  
Keyword(s):  
Growth Behavior ◽  
Initial Growth ◽  
Microstructural Properties
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